Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

Yui Hong Matthias Tan, Hoon Ryu, Bent Weber, Sunhee Lee, Rajib Rahman, Lloyd C L Hollenberg, Michelle Y. Simmons, Gerhard Klimeck

Research output: Contribution to conferenceAbstract


Donor-based silicon phosphorus devices are regarded as promising candidates for quantum computing architectures. The precise number of donors in an ultra-scaled silicon phosphorus double donor-dot device [1] is determined via comparison of theoretically modeled binding energy confidence bands with experimental charge stability diagram measurements. High fidelity of modeling results are enabled through a comprehensive analysis of atomistic dopant placement fluctuations.

Original languageEnglish
Number of pages2
Publication statusPublished - 4 Dec 2015
Externally publishedYes
EventIEEE Silicon Nanoelectronics Workshop 2014 - Hilton Hawaiian Village, Honolulu HI, United States of America
Duration: 8 Jun 20149 Jun 2014


WorkshopIEEE Silicon Nanoelectronics Workshop 2014
Abbreviated titleSNW 2014
Country/TerritoryUnited States of America
CityHonolulu HI
Internet address

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