Stacking fault asymmetry in epitaxial films of mocvd znse/gaas(001)

J. L. Batstone, J. W. Steeds, P. J. Wright

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Abstract

Epitaxial films of ZnSe/GaAs(001) contain high densities of stacking faults (≈ 1010cm−2) which show a marked asymmetry in density parallel to orthogonal [110] and [1(formula presented)0] directions. Addition of dopants such as Al and In during film growth affects the defect distribution resulting in both a systematic reduction in stacking fault density with increasing dopant concentration and the formation of misfit dislocations. It is postulated that the observed stacking fault asymmetry arises due to variations in partial dislocation mobilities due to the addition of dopants.

Original languageEnglish
Pages (from-to)609-620
Number of pages12
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume66
Issue number4
DOIs
Publication statusPublished - Oct 1992
Externally publishedYes

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