Stability of visible luminescence from porous silicon

J. L. Batstone, M. A. Tischler, R. T. Collins

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The stability of the luminescence from porous Si has been improved by rapid thermal oxidation. As-prepared and oxidized samples have been compared by cathodoluminescence and photoluminescence. Electron beam excitation resulted in rapid decay of the porous Si emission from as-prepared samples. Photoluminescence measurements from as-prepared samples in oxygen showed a similar degradation. In contrast, the rapid thermal oxidized samples showed a dramatic improvement in stability under either electron beam or photoexcitation.

Original languageEnglish
Pages (from-to)2667-2669
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 1 Dec 1993
Externally publishedYes

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