Spin-orbit interaction in a two-dimensional hole gas at the surface of hydrogenated diamond

Mark Thomas Edmonds; Laurens Henry Willems van Beveren; Oleh Klochan; Jiri Cervenka; Kumaravelu Ganesan; Steven Prawer; Lothar F Ley; Alexander R Hamilton; Christopher Ian Pakes

doi:10.1021/nl502081y

Spin-orbit interaction in a two-dimensional hole gas at the surface of hydrogenated diamond

Mark Thomas Edmonds, Laurens Henry Willems van Beveren, Oleh Klochan, Jiri Cervenka, Kumaravelu Ganesan, Steven Prawer, Lothar F Ley, Alexander R Hamilton, Christopher Ian Pakes

School of Physics and Astronomy

Research output: Contribution to journal › Article › Research › peer-review

39 Citations (Scopus)

Abstract

Hydrogenated diamond possesses a unique surface conductivity as a result of transfer doping by surface acceptors. Yet, despite being extensively studied for the past two decades, little is known about the system at low temperature, particularly whether a two-dimensional hole gas forms at the diamond surface. Here we report that (100) diamond, when functionalized with hydrogen, supports a p-type spin-3/2 two-dimensional surface conductivity with a spin–orbit interaction of 9.74 ± 0.1 meV through the observation of weak antilocalization effects in magneto-conductivity measurements at low temperature. Fits to 2D localization theory yield a spin relaxation length of 30 ± 1 nm and a spin-relaxation time of ∼0.67 ± 0.02 ps. The existence of a 2D system with spin orbit coupling at the surface of a wide band gap insulating material has great potential for future applications in ferromagnet–semiconductor and superconductor–semiconductor devices.

Original language	English
Pages (from-to)	16-20
Number of pages	5
Journal	Nano Letters
Volume	15
Issue number	1
DOIs	https://doi.org/10.1021/nl502081y
Publication status	Published - 2015

Keywords

Diamond
surface conductivity
spin−orbit interaction
2DHG

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10.1021/nl502081y

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title = "Spin-orbit interaction in a two-dimensional hole gas at the surface of hydrogenated diamond",

abstract = "Hydrogenated diamond possesses a unique surface conductivity as a result of transfer doping by surface acceptors. Yet, despite being extensively studied for the past two decades, little is known about the system at low temperature, particularly whether a two-dimensional hole gas forms at the diamond surface. Here we report that (100) diamond, when functionalized with hydrogen, supports a p-type spin-3/2 two-dimensional surface conductivity with a spin–orbit interaction of 9.74 ± 0.1 meV through the observation of weak antilocalization effects in magneto-conductivity measurements at low temperature. Fits to 2D localization theory yield a spin relaxation length of 30 ± 1 nm and a spin-relaxation time of ∼0.67 ± 0.02 ps. The existence of a 2D system with spin orbit coupling at the surface of a wide band gap insulating material has great potential for future applications in ferromagnet–semiconductor and superconductor–semiconductor devices.",

keywords = "Diamond, surface conductivity, spin−orbit interaction, 2DHG",

author = "Edmonds, {Mark Thomas} and {Willems van Beveren}, {Laurens Henry} and Oleh Klochan and Jiri Cervenka and Kumaravelu Ganesan and Steven Prawer and Ley, {Lothar F} and Hamilton, {Alexander R} and Pakes, {Christopher Ian}",

year = "2015",

doi = "10.1021/nl502081y",

language = "English",

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journal = "Nano Letters",

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T1 - Spin-orbit interaction in a two-dimensional hole gas at the surface of hydrogenated diamond

AU - Edmonds, Mark Thomas

AU - Willems van Beveren, Laurens Henry

AU - Klochan, Oleh

AU - Cervenka, Jiri

AU - Ganesan, Kumaravelu

AU - Prawer, Steven

AU - Ley, Lothar F

AU - Hamilton, Alexander R

AU - Pakes, Christopher Ian

PY - 2015

Y1 - 2015

N2 - Hydrogenated diamond possesses a unique surface conductivity as a result of transfer doping by surface acceptors. Yet, despite being extensively studied for the past two decades, little is known about the system at low temperature, particularly whether a two-dimensional hole gas forms at the diamond surface. Here we report that (100) diamond, when functionalized with hydrogen, supports a p-type spin-3/2 two-dimensional surface conductivity with a spin–orbit interaction of 9.74 ± 0.1 meV through the observation of weak antilocalization effects in magneto-conductivity measurements at low temperature. Fits to 2D localization theory yield a spin relaxation length of 30 ± 1 nm and a spin-relaxation time of ∼0.67 ± 0.02 ps. The existence of a 2D system with spin orbit coupling at the surface of a wide band gap insulating material has great potential for future applications in ferromagnet–semiconductor and superconductor–semiconductor devices.

AB - Hydrogenated diamond possesses a unique surface conductivity as a result of transfer doping by surface acceptors. Yet, despite being extensively studied for the past two decades, little is known about the system at low temperature, particularly whether a two-dimensional hole gas forms at the diamond surface. Here we report that (100) diamond, when functionalized with hydrogen, supports a p-type spin-3/2 two-dimensional surface conductivity with a spin–orbit interaction of 9.74 ± 0.1 meV through the observation of weak antilocalization effects in magneto-conductivity measurements at low temperature. Fits to 2D localization theory yield a spin relaxation length of 30 ± 1 nm and a spin-relaxation time of ∼0.67 ± 0.02 ps. The existence of a 2D system with spin orbit coupling at the surface of a wide band gap insulating material has great potential for future applications in ferromagnet–semiconductor and superconductor–semiconductor devices.

KW - Diamond

KW - surface conductivity

KW - spin−orbit interaction

KW - 2DHG

UR - http://pubs.acs.org/doi/pdf/10.1021/nl502081y

U2 - 10.1021/nl502081y

DO - 10.1021/nl502081y

M3 - Article

VL - 15

SP - 16

EP - 20

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 1

ER -

Spin-orbit interaction in a two-dimensional hole gas at the surface of hydrogenated diamond

Abstract

Keywords

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