Spectroscopic ellipsometry as an optical probe of strain evolution in ferroelectric thin films

D. Y. Lei; S. Kéna-Cohen; B. Zou; P. K. Petrov; Y. Sonnefraud; J. Breeze; S. A. Maier; N. M. Alford

doi:10.1364/OE.20.004419

Spectroscopic ellipsometry as an optical probe of strain evolution in ferroelectric thin films

D. Y. Lei, S. Kéna-Cohen, B. Zou, P. K. Petrov, Y. Sonnefraud, J. Breeze, S. A. Maier, N. M. Alford

Research output: Contribution to journal › Article › Research › peer-review

7 Citations (Scopus)

Abstract

Heteroepitaxial strain in ferroelectric thin films is known to have a significant impact on both their low and high frequency dielectric properties. In this paper, we use ex-situ spectroscopic ellipsometry to study the strain evolution with film thickness, and strain relaxation in ferroelectric Ba _0.5Sr_0.5TiO₃ epitaxial films grown on single crystal substrates. For films grown on MgO substrates, a critical thickness for strain relaxation is observed. In addition, studies of Ba_0.5Sr _0.5TiO₃ films grown on different single crystal substrates reveal that the strain relaxation rate can be inferred from changes in the optical properties. Using this information, we show that the optical constants of Ba_0.5Sr_0.5TiO₃ can be readily tuned via strain engineering.

Original language	English
Pages (from-to)	4419-4427
Number of pages	9
Journal	Optics Express
Volume	20
Issue number	4
DOIs	https://doi.org/10.1364/OE.20.004419
Publication status	Published - 13 Feb 2012
Externally published	Yes

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title = "Spectroscopic ellipsometry as an optical probe of strain evolution in ferroelectric thin films",

abstract = "Heteroepitaxial strain in ferroelectric thin films is known to have a significant impact on both their low and high frequency dielectric properties. In this paper, we use ex-situ spectroscopic ellipsometry to study the strain evolution with film thickness, and strain relaxation in ferroelectric Ba 0.5Sr0.5TiO3 epitaxial films grown on single crystal substrates. For films grown on MgO substrates, a critical thickness for strain relaxation is observed. In addition, studies of Ba0.5Sr 0.5TiO3 films grown on different single crystal substrates reveal that the strain relaxation rate can be inferred from changes in the optical properties. Using this information, we show that the optical constants of Ba0.5Sr0.5TiO3 can be readily tuned via strain engineering.",

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AU - Lei, D. Y.

AU - Kéna-Cohen, S.

AU - Zou, B.

AU - Petrov, P. K.

AU - Sonnefraud, Y.

AU - Breeze, J.

AU - Maier, S. A.

AU - Alford, N. M.

PY - 2012/2/13

Y1 - 2012/2/13

N2 - Heteroepitaxial strain in ferroelectric thin films is known to have a significant impact on both their low and high frequency dielectric properties. In this paper, we use ex-situ spectroscopic ellipsometry to study the strain evolution with film thickness, and strain relaxation in ferroelectric Ba 0.5Sr0.5TiO3 epitaxial films grown on single crystal substrates. For films grown on MgO substrates, a critical thickness for strain relaxation is observed. In addition, studies of Ba0.5Sr 0.5TiO3 films grown on different single crystal substrates reveal that the strain relaxation rate can be inferred from changes in the optical properties. Using this information, we show that the optical constants of Ba0.5Sr0.5TiO3 can be readily tuned via strain engineering.

AB - Heteroepitaxial strain in ferroelectric thin films is known to have a significant impact on both their low and high frequency dielectric properties. In this paper, we use ex-situ spectroscopic ellipsometry to study the strain evolution with film thickness, and strain relaxation in ferroelectric Ba 0.5Sr0.5TiO3 epitaxial films grown on single crystal substrates. For films grown on MgO substrates, a critical thickness for strain relaxation is observed. In addition, studies of Ba0.5Sr 0.5TiO3 films grown on different single crystal substrates reveal that the strain relaxation rate can be inferred from changes in the optical properties. Using this information, we show that the optical constants of Ba0.5Sr0.5TiO3 can be readily tuned via strain engineering.

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Spectroscopic ellipsometry as an optical probe of strain evolution in ferroelectric thin films

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