Solution-processed low temperature amorphous thin films

Birendra Singh; Jacek Jasieniak; Chris D. Easton; Leonardo Tozi; Mark Bown

Solution-processed low temperature amorphous thin films

Birendra Singh, Jacek Jasieniak, Chris D. Easton, Leonardo Tozi, Mark Bown

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

Abstract

Oxidative treatment effectively reduces residual impurities in the thin films of metal oxide deposited via precursor route enabling reduced temperature of processing. Non-halide based precursors were found to be good candidate which shows that oxidative treatment significantly enhance the rate of bulk metal oxide formation resulting in high mobility transistors.

Original language	English
Title of host publication	Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Publisher	Curran Associates
Pages	1786-1788
Number of pages	3
Volume	3
ISBN (Print)	9781627486521
Publication status	Published - 2012
Externally published	Yes
Event	International Display Workshops in Conjunction with Asia Display (IDW/AD 2012) - Kyoto International Conference Center, Kyoto, Japan Duration: 4 Dec 2012 → 7 Dec 2012 Conference number: 19th https://www.idw.or.jp/IDW12FP.pdf

Conference

Conference	International Display Workshops in Conjunction with Asia Display (IDW/AD 2012)
Abbreviated title	IDW/AD 2012
Country/Territory	Japan
City	Kyoto
Period	4/12/12 → 7/12/12
Internet address	https://www.idw.or.jp/IDW12FP.pdf

Keywords

Non-halides
Oxidative treatment
Thin film transistors

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@inproceedings{342cfa33389d43859d597b7059eadd45,

title = "Solution-processed low temperature amorphous thin films",

abstract = "Oxidative treatment effectively reduces residual impurities in the thin films of metal oxide deposited via precursor route enabling reduced temperature of processing. Non-halide based precursors were found to be good candidate which shows that oxidative treatment significantly enhance the rate of bulk metal oxide formation resulting in high mobility transistors.",

keywords = "Non-halides, Oxidative treatment, Thin film transistors",

author = "Birendra Singh and Jacek Jasieniak and Easton, \{Chris D.\} and Leonardo Tozi and Mark Bown",

year = "2012",

language = "English",

isbn = "9781627486521",

volume = "3",

pages = "1786--1788",

booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",

publisher = "Curran Associates",

address = "United States of America",

note = "International Display Workshops in Conjunction with Asia Display (IDW/AD 2012), IDW/AD 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

url = "https://www.idw.or.jp/IDW12FP.pdf",

}

TY - GEN

T1 - Solution-processed low temperature amorphous thin films

AU - Singh, Birendra

AU - Jasieniak, Jacek

AU - Easton, Chris D.

AU - Tozi, Leonardo

AU - Bown, Mark

N1 - Conference code: 19th

PY - 2012

Y1 - 2012

N2 - Oxidative treatment effectively reduces residual impurities in the thin films of metal oxide deposited via precursor route enabling reduced temperature of processing. Non-halide based precursors were found to be good candidate which shows that oxidative treatment significantly enhance the rate of bulk metal oxide formation resulting in high mobility transistors.

AB - Oxidative treatment effectively reduces residual impurities in the thin films of metal oxide deposited via precursor route enabling reduced temperature of processing. Non-halide based precursors were found to be good candidate which shows that oxidative treatment significantly enhance the rate of bulk metal oxide formation resulting in high mobility transistors.

KW - Non-halides

KW - Oxidative treatment

KW - Thin film transistors

UR - https://www.scopus.com/pages/publications/84885905551

M3 - Conference Paper

AN - SCOPUS:84885905551

SN - 9781627486521

VL - 3

SP - 1786

EP - 1788

BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012

PB - Curran Associates

T2 - International Display Workshops in Conjunction with Asia Display (IDW/AD 2012)

Y2 - 4 December 2012 through 7 December 2012

ER -

Solution-processed low temperature amorphous thin films

Abstract

Conference

Keywords

UN SDGs

Other files and links

Cite this