Solution-processed CdS thin films from a single-source precursor

Anthony S. R. Chesman, Noel W. Duffy, Alessandro Martucci, Leonardo de Oliveira Tozi, Th. Birendra Singh, Jacek J. Jasieniak

Research output: Contribution to journalArticleResearchpeer-review

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Abstract

Herein we outline the in situ formation of a solution processable CdS precursor, which undergoes facile thermal decomposition to form thin films of the metal sulfide. Through the use of 1H and 13C nuclear magnetic resonance spectroscopy (NMR) and single crystal X-ray diffraction (XRD) we examine the speciation of [Cd(EtXn)2] upon dissolution and investigate the decomposition of the xanthate complex with Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis-mass spectroscopy (TGA-MS) and head space gas chromatography mass spectroscopy (HS GC-MS). The effect of using a CdCl2 treatment to promote crystallite growth at various temperatures is elucidated by thin film XRD, scanning electron microscopy (SEM), ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and UV-vis spectroscopy. Field effect transistors are fabricated to measure the mobility of the CdS thin films and spectral photoconductivity measurements reveal optimised deposition conditions give thin films with optoelectronic properties comparable to those of CdS formed by chemical bath deposition.
Original languageEnglish
Pages (from-to)3247-3253
Number of pages7
JournalJournal of Materials Chemistry C
Volume2
Issue number17
DOIs
Publication statusPublished - 7 May 2014
Externally publishedYes

Cite this

Chesman, A. S. R., Duffy, N. W., Martucci, A., Tozi, L. D. O., Singh, T. B., & Jasieniak, J. J. (2014). Solution-processed CdS thin films from a single-source precursor. Journal of Materials Chemistry C, 2(17), 3247-3253. https://doi.org/10.1039/c3tc32189d
Chesman, Anthony S. R. ; Duffy, Noel W. ; Martucci, Alessandro ; Tozi, Leonardo de Oliveira ; Singh, Th. Birendra ; Jasieniak, Jacek J. / Solution-processed CdS thin films from a single-source precursor. In: Journal of Materials Chemistry C. 2014 ; Vol. 2, No. 17. pp. 3247-3253.
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Chesman, ASR, Duffy, NW, Martucci, A, Tozi, LDO, Singh, TB & Jasieniak, JJ 2014, 'Solution-processed CdS thin films from a single-source precursor', Journal of Materials Chemistry C, vol. 2, no. 17, pp. 3247-3253. https://doi.org/10.1039/c3tc32189d

Solution-processed CdS thin films from a single-source precursor. / Chesman, Anthony S. R.; Duffy, Noel W.; Martucci, Alessandro; Tozi, Leonardo de Oliveira; Singh, Th. Birendra; Jasieniak, Jacek J.

In: Journal of Materials Chemistry C, Vol. 2, No. 17, 07.05.2014, p. 3247-3253.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Chesman, Anthony S. R.

AU - Duffy, Noel W.

AU - Martucci, Alessandro

AU - Tozi, Leonardo de Oliveira

AU - Singh, Th. Birendra

AU - Jasieniak, Jacek J.

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AB - Herein we outline the in situ formation of a solution processable CdS precursor, which undergoes facile thermal decomposition to form thin films of the metal sulfide. Through the use of 1H and 13C nuclear magnetic resonance spectroscopy (NMR) and single crystal X-ray diffraction (XRD) we examine the speciation of [Cd(EtXn)2] upon dissolution and investigate the decomposition of the xanthate complex with Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis-mass spectroscopy (TGA-MS) and head space gas chromatography mass spectroscopy (HS GC-MS). The effect of using a CdCl2 treatment to promote crystallite growth at various temperatures is elucidated by thin film XRD, scanning electron microscopy (SEM), ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and UV-vis spectroscopy. Field effect transistors are fabricated to measure the mobility of the CdS thin films and spectral photoconductivity measurements reveal optimised deposition conditions give thin films with optoelectronic properties comparable to those of CdS formed by chemical bath deposition.

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