Abstract
A recently observed increase of the grain-boundary (GB) mobility in Al by adding Ga impurities is in contrast with classical solute drag theories. This abnormal behaviour can be explained by the formation of a quasiliquid layer at the GB, which enhances diffusion and mobility. We present here a model including these various aspects which explains the experimental results.
Original language | English |
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Pages (from-to) | 133-138 |
Number of pages | 6 |
Journal | Philosophical Magazine Letters |
Volume | 76 |
Issue number | 3 |
DOIs | |
Publication status | Published - Sep 1997 |
Externally published | Yes |