Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics

Birendra Singh; Jacek Jasieniak; Mark Bown

doi:10.1109/COMMAD.2010.5699733

Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics

Birendra Singh, Jacek Jasieniak, Mark Bown

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

1 Citation (Scopus)

Abstract

We report on the use of sol-gel-processed amorphous oxides based on a (Zn_xSn_y)O_z composition to develop thin-film transistors (TFTs) with electron mobility exceeding 1 cm²/Vs and high on/off ratios (>10⁶). These devices are aided by a high K dielectric developed by CSIRO, which enables reduced operating voltages to be achieved.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	191-192
Number of pages	2
ISBN (Print)	9781424473328
DOIs	https://doi.org/10.1109/COMMAD.2010.5699733
Publication status	Published - 1 Dec 2010
Externally published	Yes
Event	Conference on Optoelectronic and Microelectronic Materials and Devices 2010 - Australian National University, Canberra, Australia Duration: 12 Dec 2010 → 15 Dec 2010 https://ieeexplore.ieee.org/xpl/conhome/5687599/proceeding (Proceedings)

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices 2010
Abbreviated title	COMMAD 2010
Country/Territory	Australia
City	Canberra
Period	12/12/10 → 15/12/10
Internet address	https://ieeexplore.ieee.org/xpl/conhome/5687599/proceeding (Proceedings)

Access to Document

10.1109/COMMAD.2010.5699733

Cite this

Singh, B., Jasieniak, J., & Bown, M. (2010). Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 191-192). Article 5699733 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2010.5699733

Singh, Birendra ; Jasieniak, Jacek ; Bown, Mark. / Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. IEEE, Institute of Electrical and Electronics Engineers, 2010. pp. 191-192 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

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title = "Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics",

abstract = "We report on the use of sol-gel-processed amorphous oxides based on a (ZnxSny)Oz composition to develop thin-film transistors (TFTs) with electron mobility exceeding 1 cm2/Vs and high on/off ratios (>106). These devices are aided by a high K dielectric developed by CSIRO, which enables reduced operating voltages to be achieved.",

author = "Birendra Singh and Jacek Jasieniak and Mark Bown",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/COMMAD.2010.5699733",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

pages = "191--192",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

address = "United States of America",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices 2010, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

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Singh, B, Jasieniak, J & Bown, M 2010, Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699733, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, IEEE, Institute of Electrical and Electronics Engineers, pp. 191-192, Conference on Optoelectronic and Microelectronic Materials and Devices 2010, Canberra, Australian Capital Territory, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699733

Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics. / Singh, Birendra; Jasieniak, Jacek; Bown, Mark.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. IEEE, Institute of Electrical and Electronics Engineers, 2010. p. 191-192 5699733 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

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T1 - Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics

AU - Singh, Birendra

AU - Jasieniak, Jacek

AU - Bown, Mark

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We report on the use of sol-gel-processed amorphous oxides based on a (ZnxSny)Oz composition to develop thin-film transistors (TFTs) with electron mobility exceeding 1 cm2/Vs and high on/off ratios (>106). These devices are aided by a high K dielectric developed by CSIRO, which enables reduced operating voltages to be achieved.

AB - We report on the use of sol-gel-processed amorphous oxides based on a (ZnxSny)Oz composition to develop thin-film transistors (TFTs) with electron mobility exceeding 1 cm2/Vs and high on/off ratios (>106). These devices are aided by a high K dielectric developed by CSIRO, which enables reduced operating voltages to be achieved.

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DO - 10.1109/COMMAD.2010.5699733

M3 - Conference Paper

AN - SCOPUS:79951730404

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 191

EP - 192

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Singh B, Jasieniak J, Bown M. Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. IEEE, Institute of Electrical and Electronics Engineers. 2010. p. 191-192. 5699733. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699733

Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics

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