Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics

Birendra Singh, Jacek Jasieniak, Mark Bown

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

Abstract

We report on the use of sol-gel-processed amorphous oxides based on a (ZnxSny)Oz composition to develop thin-film transistors (TFTs) with electron mobility exceeding 1 cm2/Vs and high on/off ratios (>106). These devices are aided by a high K dielectric developed by CSIRO, which enables reduced operating voltages to be achieved.

Original languageEnglish
Title of host publication2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages191-192
Number of pages2
ISBN (Print)9781424473328
DOIs
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia
Duration: 12 Dec 201015 Dec 2010

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
CountryAustralia
CityCanberra, ACT
Period12/12/1015/12/10

Cite this

Singh, B., Jasieniak, J., & Bown, M. (2010). Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 191-192). [5699733] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2010.5699733