Abstract
A well-defined silicon oxide/silicon interface way synthesized by the reaction of the precursor cluster H8Si8O12 with Si(100) surface and characterized using Si 2p core level photoemission spectroscopy. Information gained regarding the assignments of silicon oxide group shifts and peak widths is used to evaluate assumptions and assignments of photoemission spectra of silicon oxide interfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 2441-2444 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 71 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 1 Jan 1993 |
| Externally published | Yes |