Single-walled nanotube MIS memory devices

M. Alba-Martin; Timothy Firmager; Joseph Atherton; Mark C. Rosamond; A. J. Gallant; Michael C. Petty; Amal Al Ghaferi; Ahmad Ayesh; Daniel Ashall; Mohammed F. Mabrook; Dagou A. Zeze

doi:10.1109/NANO.2011.6144530

Single-walled nanotube MIS memory devices

M. Alba-Martin, Timothy Firmager, Joseph Atherton, Mark C. Rosamond, A. J. Gallant, Michael C. Petty, Amal Al Ghaferi, Ahmad Ayesh, Daniel Ashall, Mohammed F. Mabrook, Dagou A. Zeze

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other › peer-review

3 Citations (Scopus)

Abstract

Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 ¹²/ cm ².

Original language	English
Title of host publication	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages	991-995
Number of pages	5
DOIs	https://doi.org/10.1109/NANO.2011.6144530
Publication status	Published - 2011
Externally published	Yes
Event	IEEE International Conference on Nanotechnology 2011 - Portland, United States of America Duration: 15 Aug 2011 → 19 Aug 2011 Conference number: 11th https://ieeexplore.ieee.org/xpl/conhome/6125891/proceeding (Proceedings)

Conference

Conference	IEEE International Conference on Nanotechnology 2011
Abbreviated title	IEEE-NANO 2011
Country/Territory	United States of America
City	Portland
Period	15/08/11 → 19/08/11
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6125891/proceeding (Proceedings)

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10.1109/NANO.2011.6144530

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@inproceedings{8db35d6986b1476b91d5f55667b8cd3f,

title = "Single-walled nanotube MIS memory devices",

abstract = "Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 12/ cm 2.",

author = "M. Alba-Martin and Timothy Firmager and Joseph Atherton and Rosamond, {Mark C.} and Gallant, {A. J.} and Petty, {Michael C.} and Ghaferi, {Amal Al} and Ahmad Ayesh and Daniel Ashall and Mabrook, {Mohammed F.} and Zeze, {Dagou A.}",

year = "2011",

doi = "10.1109/NANO.2011.6144530",

language = "English",

isbn = "9781457715143",

pages = "991--995",

booktitle = "2011 11th IEEE International Conference on Nanotechnology, NANO 2011",

note = "IEEE International Conference on Nanotechnology 2011, IEEE-NANO 2011 ; Conference date: 15-08-2011 Through 19-08-2011",

url = "https://ieeexplore.ieee.org/xpl/conhome/6125891/proceeding",

}

Alba-Martin, M, Firmager, T, Atherton, J, Rosamond, MC, Gallant, AJ, Petty, MC, Ghaferi, AA, Ayesh, A, Ashall, D, Mabrook, MF & Zeze, DA 2011, Single-walled nanotube MIS memory devices. in 2011 11th IEEE International Conference on Nanotechnology, NANO 2011., 6144530, pp. 991-995, IEEE International Conference on Nanotechnology 2011, Portland, Oregon, United States of America, 15/08/11. https://doi.org/10.1109/NANO.2011.6144530

TY - GEN

T1 - Single-walled nanotube MIS memory devices

AU - Alba-Martin, M.

AU - Firmager, Timothy

AU - Atherton, Joseph

AU - Rosamond, Mark C.

AU - Gallant, A. J.

AU - Petty, Michael C.

AU - Ghaferi, Amal Al

AU - Ayesh, Ahmad

AU - Ashall, Daniel

AU - Mabrook, Mohammed F.

AU - Zeze, Dagou A.

N1 - Conference code: 11th

PY - 2011

Y1 - 2011

N2 - Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 12/ cm 2.

AB - Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 12/ cm 2.

UR - http://www.scopus.com/inward/record.url?scp=84858956104&partnerID=8YFLogxK

U2 - 10.1109/NANO.2011.6144530

DO - 10.1109/NANO.2011.6144530

M3 - Conference Paper

AN - SCOPUS:84858956104

SN - 9781457715143

SP - 991

EP - 995

BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011

T2 - IEEE International Conference on Nanotechnology 2011

Y2 - 15 August 2011 through 19 August 2011

ER -

Single-walled nanotube MIS memory devices

Abstract

Conference

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