Single-walled nanotube MIS memory devices

M. Alba-Martin, Timothy Firmager, Joseph Atherton, Mark C. Rosamond, A. J. Gallant, Michael C. Petty, Amal Al Ghaferi, Ahmad Ayesh, Daniel Ashall, Mohammed F. Mabrook, Dagou A. Zeze

Research output: Chapter in Book/Report/Conference proceedingConference PaperOtherpeer-review

3 Citations (Scopus)

Abstract

Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 12/ cm 2.

Original languageEnglish
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages991-995
Number of pages5
DOIs
Publication statusPublished - 2011
Externally publishedYes
EventIEEE International Conference on Nanotechnology 2011 - Portland, United States of America
Duration: 15 Aug 201119 Aug 2011
Conference number: 11th
https://ieeexplore.ieee.org/xpl/conhome/6125891/proceeding (Proceedings)

Conference

ConferenceIEEE International Conference on Nanotechnology 2011
Abbreviated titleIEEE-NANO 2011
CountryUnited States of America
CityPortland
Period15/08/1119/08/11
Internet address

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