TY - JOUR
T1 - Single-step-fabricated disordered metasurfaces for enhanced light extraction from LEDs
AU - Mao, Peng
AU - Liu, Changxu
AU - Li, Xiyan
AU - Liu, Mengxia
AU - Chen, Qiang
AU - Han, Min
AU - Maier, Stefan A.
AU - Sargent, Edward H.
AU - Zhang, Shuang
N1 - Funding Information:
P.M. and M.H. acknowledge the financial support from by National Natural Science Foundation of China (Grant No. 11627806, U1909214, 11604161), the National Key R&D Program of China (Grant No. 2016YFA0201002). P.M. acknowledges the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie Grant (Grant No. 752102). C.L. acknowledges the financial support from Humboldt Research Fellowship from Alexander von Humboldt Foundation. P.M., C.L. and S.Z acknowledge 2020 European Research Council Project Nos. 734578 (D-SPA) and 648783 (TOPOLOGICAL), Leverhulme Trust (grant no. RPG-2012-674), the Royal Society, the Wolfson Foundation. S.A.M. acknowledges funding support from the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy, EXC 2089/1-390776260, the Solar Energies go Hybrid (SolTech) programme, the EPSRC Reactive Plasmonics Programme (EP/ M013812/1), and the Lee-Lucas Chair in Physics. X.L., M.L. and E.S. acknowledge financial support from the Natural Sciences and Engineering Research Council (NSERC) of Canada.
Publisher Copyright:
© 2021, The Author(s).
PY - 2021/12
Y1 - 2021/12
N2 - While total internal reflection (TIR) lays the foundation for many important applications, foremost fibre optics that revolutionised information technologies, it is undesirable in some other applications such as light-emitting diodes (LEDs), which are a backbone for energy-efficient light sources. In the case of LEDs, TIR prevents photons from escaping the constituent high-index materials. Advances in material science have led to good efficiencies in generating photons from electron–hole pairs, making light extraction the bottleneck of the overall efficiency of LEDs. In recent years, the extraction efficiency has been improved, using nanostructures at the semiconductor/air interface that outcouple trapped photons to the outside continuum. However, the design of geometrical features for light extraction with sizes comparable to or smaller than the optical wavelength always requires sophisticated and time-consuming fabrication, which causes a gap between lab demonstration and industrial-level applications. Inspired by lightning bugs, we propose and realise a disordered metasurface for light extraction throughout the visible spectrum, achieved with single-step fabrication. By applying such a cost-effective light extraction layer, we improve the external quantum efficiency by a factor of 1.65 for commercialised GaN LEDs, demonstrating a substantial potential for global energy-saving and sustainability.
AB - While total internal reflection (TIR) lays the foundation for many important applications, foremost fibre optics that revolutionised information technologies, it is undesirable in some other applications such as light-emitting diodes (LEDs), which are a backbone for energy-efficient light sources. In the case of LEDs, TIR prevents photons from escaping the constituent high-index materials. Advances in material science have led to good efficiencies in generating photons from electron–hole pairs, making light extraction the bottleneck of the overall efficiency of LEDs. In recent years, the extraction efficiency has been improved, using nanostructures at the semiconductor/air interface that outcouple trapped photons to the outside continuum. However, the design of geometrical features for light extraction with sizes comparable to or smaller than the optical wavelength always requires sophisticated and time-consuming fabrication, which causes a gap between lab demonstration and industrial-level applications. Inspired by lightning bugs, we propose and realise a disordered metasurface for light extraction throughout the visible spectrum, achieved with single-step fabrication. By applying such a cost-effective light extraction layer, we improve the external quantum efficiency by a factor of 1.65 for commercialised GaN LEDs, demonstrating a substantial potential for global energy-saving and sustainability.
UR - http://www.scopus.com/inward/record.url?scp=85114553246&partnerID=8YFLogxK
U2 - 10.1038/s41377-021-00621-7
DO - 10.1038/s41377-021-00621-7
M3 - Article
AN - SCOPUS:85114553246
SN - 2095-5545
VL - 10
JO - Light: Science and Applications
JF - Light: Science and Applications
IS - 1
M1 - 180
ER -