Single phased MnZnO3 solid solution thin films for solar energy harvesting applications

M. A. Mansoor, N. M. Huang, V. McKee, T. A. Nirmal Peiris, K. G. U. Wijayantha, Z. Arifin, M. Misran, M. Mazhar

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Single phased manganese-zinc oxide (MnZnO3) solid solution thin films have been deposited on fluorine doped tin oxide (FTO) coated glass substrates by aerosol assisted chemical vapor deposition (AACVD) using a single source bimetallic complex, [Mn2Zn2(TFA)8(THF)4]n (1) (where TFA=trifluroactetato and THF=tetrahydrofuran), as precursor. The complex (1) was obtained by direct reaction of diacetatozinc(II) dihydrate, diacetatomanganese(II) and trifloroacetic acid in THF and was characterized by physico-chemical methods. The thickness of the film observed by a profilometer, is about 375 nm. The phase purity and the stoichiometry of the films were determined by X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX). The field emission gun-scanning electron microscopic (FEG-SEM) and atomic force microscopic (AFM) images confirmed that the film deposited at 500 °C shows an agglomerated flower-like structure with high roughness and porosity. The optical measurements suggested that MnZnO3 has a direct band gap of 2.18 eV. The photoelectrochemical (PEC) studies showed an anodic photocurrent density of 300 μA/cm2 at 0 V vs. Ag/AgCl/3 M KCl.

Original languageEnglish
Article number7608
Pages (from-to)258-264
Number of pages7
JournalSolar Energy Materials and Solar Cells
Publication statusPublished - 1 Jan 2015
Externally publishedYes


  • Band gap
  • Nanoparticle
  • Photoanode
  • Semiconductor
  • Single phased MnZnO
  • Thin film

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