Abstract
In this paper, we demonstrate a high-power erbium-doped fiber amplifier pumped by single-mode titanium sapphire (Ti:S) laser at 980 nm. The highest output power of 22.6 dBm is measured at 1549 nm with an input signal power of 4 dBm and a pump power of 300 mW. This corresponds to power-conversion efficiency (PCE) of 60%, providing 95% quantum efficiency. The experimental results show the feasibility of using a single-mode laser from a high-power semiconductor chip to produce high-efficiency booster amplifiers.
| Original language | English |
|---|---|
| Pages (from-to) | 71-74 |
| Number of pages | 4 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 48 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2006 |
| Externally published | Yes |
Keywords
- Erbium-doped fiber amplifier
- High power
- Single-mode pumping
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