Silver bismuth sulfoiodide solar cells: tuning optoelectronic properties by sulfide modification for enhanced photovoltaic performance

Narendra Pai, Jianfeng Lu, Thomas R. Gengenbach, Aaron Seeber, Anthony S.R. Chesman, Liangcong Jiang, Dimuthu C. Senevirathna, Philip C. Andrews, Udo Bach, Yi-Bing Cheng, Alexandr N. Simonov

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Silver bismuth iodides (AgaBibIa+3b) are nontoxic and comparatively cheap photovoltaic materials, but their wide bandgaps and downshifted valence band edges limit their performance as light absorbers in solar cells. Herein, a strategy is introduced to tune the optoelectronic properties of AgaBibIa+3b by partial anionic substitution with the sulfide dianion. A consistent narrowing of the bandgap by 0.1 eV and an upshift of the valence band edge by 0.1–0.3 eV upon modification with sulfide are demonstrated for AgBiI4, Ag2BiI5, Ag3BiI6, and AgBi2I7 compositions. Solar cells based on silver bismuth sulfoiodides embedded into a mesoporous TiO2 electron-transporting scaffold, and a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] hole-transporting layer significantly outperform devices based on sulfide-free materials, mainly due to enhancements in the photocurrent by up to 48%. A power conversion efficiency of 5.44 ± 0.07% (Jsc = 14.6 ± 0.1 mA cm−2; Voc = 569 ± 3 mV; fill factor = 65.7 ± 0.3%) under 1 sun irradiation and stability under ambient conditions for over a month are demonstrated. The results reported herein indicate that further improvements should be possible with this new class of photovoltaic materials upon advances in the synthetic procedures and an increase in the level of sulfide anionic substitution.

Original languageEnglish
Article number1803396
Number of pages11
JournalAdvanced Energy Materials
Volume9
Issue number5
DOIs
Publication statusPublished - Feb 2019

Keywords

  • bandgap
  • iodide sulfide
  • lead free
  • mixed anion
  • valence band

Cite this

Pai, Narendra ; Lu, Jianfeng ; Gengenbach, Thomas R. ; Seeber, Aaron ; Chesman, Anthony S.R. ; Jiang, Liangcong ; Senevirathna, Dimuthu C. ; Andrews, Philip C. ; Bach, Udo ; Cheng, Yi-Bing ; Simonov, Alexandr N. / Silver bismuth sulfoiodide solar cells : tuning optoelectronic properties by sulfide modification for enhanced photovoltaic performance. In: Advanced Energy Materials. 2019 ; Vol. 9, No. 5.
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title = "Silver bismuth sulfoiodide solar cells: tuning optoelectronic properties by sulfide modification for enhanced photovoltaic performance",
abstract = "Silver bismuth iodides (AgaBibIa+3b) are nontoxic and comparatively cheap photovoltaic materials, but their wide bandgaps and downshifted valence band edges limit their performance as light absorbers in solar cells. Herein, a strategy is introduced to tune the optoelectronic properties of AgaBibIa+3b by partial anionic substitution with the sulfide dianion. A consistent narrowing of the bandgap by 0.1 eV and an upshift of the valence band edge by 0.1–0.3 eV upon modification with sulfide are demonstrated for AgBiI4, Ag2BiI5, Ag3BiI6, and AgBi2I7 compositions. Solar cells based on silver bismuth sulfoiodides embedded into a mesoporous TiO2 electron-transporting scaffold, and a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] hole-transporting layer significantly outperform devices based on sulfide-free materials, mainly due to enhancements in the photocurrent by up to 48{\%}. A power conversion efficiency of 5.44 ± 0.07{\%} (Jsc = 14.6 ± 0.1 mA cm−2; Voc = 569 ± 3 mV; fill factor = 65.7 ± 0.3{\%}) under 1 sun irradiation and stability under ambient conditions for over a month are demonstrated. The results reported herein indicate that further improvements should be possible with this new class of photovoltaic materials upon advances in the synthetic procedures and an increase in the level of sulfide anionic substitution.",
keywords = "bandgap, iodide sulfide, lead free, mixed anion, valence band",
author = "Narendra Pai and Jianfeng Lu and Gengenbach, {Thomas R.} and Aaron Seeber and Chesman, {Anthony S.R.} and Liangcong Jiang and Senevirathna, {Dimuthu C.} and Andrews, {Philip C.} and Udo Bach and Yi-Bing Cheng and Simonov, {Alexandr N.}",
year = "2019",
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doi = "10.1002/aenm.201803396",
language = "English",
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Silver bismuth sulfoiodide solar cells : tuning optoelectronic properties by sulfide modification for enhanced photovoltaic performance. / Pai, Narendra; Lu, Jianfeng; Gengenbach, Thomas R.; Seeber, Aaron; Chesman, Anthony S.R.; Jiang, Liangcong; Senevirathna, Dimuthu C.; Andrews, Philip C.; Bach, Udo; Cheng, Yi-Bing; Simonov, Alexandr N.

In: Advanced Energy Materials, Vol. 9, No. 5, 1803396, 02.2019.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Silver bismuth sulfoiodide solar cells

T2 - tuning optoelectronic properties by sulfide modification for enhanced photovoltaic performance

AU - Pai, Narendra

AU - Lu, Jianfeng

AU - Gengenbach, Thomas R.

AU - Seeber, Aaron

AU - Chesman, Anthony S.R.

AU - Jiang, Liangcong

AU - Senevirathna, Dimuthu C.

AU - Andrews, Philip C.

AU - Bach, Udo

AU - Cheng, Yi-Bing

AU - Simonov, Alexandr N.

PY - 2019/2

Y1 - 2019/2

N2 - Silver bismuth iodides (AgaBibIa+3b) are nontoxic and comparatively cheap photovoltaic materials, but their wide bandgaps and downshifted valence band edges limit their performance as light absorbers in solar cells. Herein, a strategy is introduced to tune the optoelectronic properties of AgaBibIa+3b by partial anionic substitution with the sulfide dianion. A consistent narrowing of the bandgap by 0.1 eV and an upshift of the valence band edge by 0.1–0.3 eV upon modification with sulfide are demonstrated for AgBiI4, Ag2BiI5, Ag3BiI6, and AgBi2I7 compositions. Solar cells based on silver bismuth sulfoiodides embedded into a mesoporous TiO2 electron-transporting scaffold, and a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] hole-transporting layer significantly outperform devices based on sulfide-free materials, mainly due to enhancements in the photocurrent by up to 48%. A power conversion efficiency of 5.44 ± 0.07% (Jsc = 14.6 ± 0.1 mA cm−2; Voc = 569 ± 3 mV; fill factor = 65.7 ± 0.3%) under 1 sun irradiation and stability under ambient conditions for over a month are demonstrated. The results reported herein indicate that further improvements should be possible with this new class of photovoltaic materials upon advances in the synthetic procedures and an increase in the level of sulfide anionic substitution.

AB - Silver bismuth iodides (AgaBibIa+3b) are nontoxic and comparatively cheap photovoltaic materials, but their wide bandgaps and downshifted valence band edges limit their performance as light absorbers in solar cells. Herein, a strategy is introduced to tune the optoelectronic properties of AgaBibIa+3b by partial anionic substitution with the sulfide dianion. A consistent narrowing of the bandgap by 0.1 eV and an upshift of the valence band edge by 0.1–0.3 eV upon modification with sulfide are demonstrated for AgBiI4, Ag2BiI5, Ag3BiI6, and AgBi2I7 compositions. Solar cells based on silver bismuth sulfoiodides embedded into a mesoporous TiO2 electron-transporting scaffold, and a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] hole-transporting layer significantly outperform devices based on sulfide-free materials, mainly due to enhancements in the photocurrent by up to 48%. A power conversion efficiency of 5.44 ± 0.07% (Jsc = 14.6 ± 0.1 mA cm−2; Voc = 569 ± 3 mV; fill factor = 65.7 ± 0.3%) under 1 sun irradiation and stability under ambient conditions for over a month are demonstrated. The results reported herein indicate that further improvements should be possible with this new class of photovoltaic materials upon advances in the synthetic procedures and an increase in the level of sulfide anionic substitution.

KW - bandgap

KW - iodide sulfide

KW - lead free

KW - mixed anion

KW - valence band

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U2 - 10.1002/aenm.201803396

DO - 10.1002/aenm.201803396

M3 - Article

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