Si/CoSi2/Si structures: pseudomorphism, interface structures, epitaxial orientations, and the control of pinholes

R. T. Tung, J. L. Batstone, S. M. Yalisove

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Abstract

The structures of thin CoSi2 layers and double heterostructures on Si(111) are studied. Results obtained from low-energy electron diffraction, Auger electron spectroscopy, planview and cross-sectional transmission electron microscopy, Rutherford backscattering spectrometry with channeling, and Nomarsky interference microscopy are presented. Discussion will focus on the following issues: (i) the formation mechanism of pinholes in thin CoSi2 layers and the techniques to avoid pinholes, (ii) the growth of either type A or B Si layers on CoSi2, (iii) the roles played by strains in the epitaxial CoSi2/ Si(111) system, and (iv) the atomic structures at various CoSi2/Si interfaces.

Original languageEnglish
Pages (from-to)815-819
Number of pages5
JournalJournal of the Electrochemical Society
Volume136
Issue number3
DOIs
Publication statusPublished - Mar 1989
Externally publishedYes

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