Abstract
Silicon-on-insulator (SOI) structures are formed by high dose oxygen implantation. The properties of the resulting Si films and the buried SiO//2 have been investigated as a function of post-implantation annealing at 1405 degree C. It is shown that uniform crystalline Si films can be formed over synthesized buried oxide, with atomically abrupt Si/SiO//2 interfaces. The remaining defects are mainly threading dislocations in the Si film and polyhedral Si precipitates inside the SiO//2, near the oxide/substrate interface. Chemical segregation of oxygen into the SiO//2 permits the formation of continuous oxide films with implanted oxygen doses as low 6 multiplied by 10**1**7 cm** minus **2, as compared to the stoichiometric value of 1. 4 multiplied by 10**1**8 cm** minus **2.
Original language | English |
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Title of host publication | E-MRS Spring Meeting, Symposium XII |
Editors | G.G. Bentini, E. Fogarassy, A. Golanski |
Publisher | Les Editions de Physique |
Pages | 95-103 |
Number of pages | 9 |
ISBN (Print) | 2868830420 |
Publication status | Published - 1 Dec 1986 |
Externally published | Yes |
Event | European Materials Research Society Fall Meeting 1986 - Strasbourg, France Duration: 2 Jun 1986 → 5 Jun 1986 |
Conference
Conference | European Materials Research Society Fall Meeting 1986 |
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Country | France |
City | Strasbourg |
Period | 2/06/86 → 5/06/86 |