Si-on-SiO//2 structures by lamp annealing of oxygen implanted Si

Silicon-on-insulator (SOI) structures are formed by high dose oxygen implantation. The properties of the resulting Si films and the buried SiO//2 have been investigated as a function of post-implantation annealing at 1405 degree C. It is shown that uniform crystalline Si films can be formed over synthesized buried oxide, with atomically abrupt Si/SiO//2 interfaces. The remaining defects are mainly threading dislocations in the Si film and polyhedral Si precipitates inside the SiO//2, near the oxide/substrate interface. Chemical segregation of oxygen into the SiO//2 permits the formation of continuous oxide films with implanted oxygen doses as low 6 multiplied by 10**1**7 cm** minus **2, as compared to the stoichiometric value of 1. 4 multiplied by 10**1**8 cm** minus **2.