Si-on-SiO//2 structures by lamp annealing of oxygen implanted Si

G. K. Celler, J. L. Batstone, K. W. West, P. L.F. Hemment, K. J. Reesom

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3 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI) structures are formed by high dose oxygen implantation. The properties of the resulting Si films and the buried SiO//2 have been investigated as a function of post-implantation annealing at 1405 degree C. It is shown that uniform crystalline Si films can be formed over synthesized buried oxide, with atomically abrupt Si/SiO//2 interfaces. The remaining defects are mainly threading dislocations in the Si film and polyhedral Si precipitates inside the SiO//2, near the oxide/substrate interface. Chemical segregation of oxygen into the SiO//2 permits the formation of continuous oxide films with implanted oxygen doses as low 6 multiplied by 10**1**7 cm** minus **2, as compared to the stoichiometric value of 1. 4 multiplied by 10**1**8 cm** minus **2.

Original languageEnglish
Title of host publicationE-MRS Spring Meeting, Symposium XII
EditorsG.G. Bentini, E. Fogarassy, A. Golanski
PublisherLes Editions de Physique
Pages95-103
Number of pages9
ISBN (Print)2868830420
Publication statusPublished - 1 Dec 1986
Externally publishedYes
EventEuropean Materials Research Society Fall Meeting 1986 - Strasbourg, France
Duration: 2 Jun 19865 Jun 1986

Conference

ConferenceEuropean Materials Research Society Fall Meeting 1986
CountryFrance
CityStrasbourg
Period2/06/865/06/86

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