Si 2p core-level shifts at the Si(100) interface: An experimental study

K. Zhang, M. Banaszak Holl, J. Bender, S. Lee

Research output: Contribution to journalArticleResearchpeer-review

24 Citations (Scopus)

Abstract

Si 2p core-level shifts are measured for a model system generated from HSi((Formula presented)(Formula presented)(Formula presented)N and Si(100)-2×1 and compared to the result obtained from a species containing similar coordination about silicon, HSi((Formula presented)(Formula presented). The dramatic difference in the products obtained is explained in terms of the chelate effect. The results are compared to previous results obtained using spherosiloxane clusters and an empirical, model-compound-based core-level shift assignment scheme is compared and contrasted with the conventional formal oxidation state assignment scheme.

Original languageEnglish
Pages (from-to)7686-7689
Number of pages4
JournalPhysical Review B
Volume54
Issue number11
DOIs
Publication statusPublished - 1 Jan 1996
Externally publishedYes

Cite this