Sensitiveness of Porous Silicon-Based Nano-Energetic Films

Andrew Plummer, Valerian A. Kuznetsov, Jason Gascooke, Joe Shapter, Nicolas H. Voelcker

Research output: Contribution to journalArticleResearchpeer-review

7 Citations (Scopus)


Nanoporous silicon (pSi) films on a silicon wafer were loaded with sodium perchlorate and perfluoropolyether (PFPE) oxidizing agents. Sensitiveness to impact, friction and electrostatic discharge (ESD) of the resulting energetic thin films were investigated. It was observed that pSi loaded with perchlorate was sensitive at the lowest limit of detection for the available equipment (<4.9 J impact energy, <5 N friction force, and <45 mJ ESD spark energy). When loaded with PFPE the material was very sensitive to impact (<4.9 J), moderately sensitive to ESD (between 45 and 100 mJ) and insensitive to friction (>360 N). pSi loaded with either perchlorate or PFPE displayed behavior during sensitiveness testing similar to other primary explosive materials.

Original languageEnglish
Pages (from-to)1029-1035
Number of pages7
JournalPropellants, Explosives, Pyrotechnics
Issue number6
Publication statusPublished - 1 Dec 2016
Externally publishedYes


  • Nano-energetic films
  • Porous silicon
  • Sensitiveness

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