Projects per year
Abstract
Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2/ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2/ZnO photodiode can operate under self-powered mode over a broad spectrum.
Original language | English |
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Article number | 110185 |
Number of pages | 8 |
Journal | Materials & Design |
Volume | 212 |
DOIs | |
Publication status | Published - 15 Dec 2021 |
Keywords
- Molybdenum disulphide
- Self-powered photodetector
- Van der Waals
- Zinc oxide
Projects
- 1 Finished
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Melbourne Centre for Nanofabrication
Khan, A. (Primary Chief Investigator (PCI))
Department of Jobs, Skills, Industry and Regions (DJSIR) (Victoria)
1/01/07 → 31/03/10
Project: Research