Self-powered MoSe2/ZnO heterojunction photodetectors with current rectification effect and broadband detection

Zhichen Wan; Haoran Mu; Zhuo Dong; Sigui Hu; Wenzhi Yu; Shenghuang Lin; Sudha Mokkapati

doi:10.1016/j.matdes.2021.110185

Self-powered MoSe₂/ZnO heterojunction photodetectors with current rectification effect and broadband detection

Zhichen Wan, Haoran Mu, Zhuo Dong, Sigui Hu, Wenzhi Yu, Shenghuang Lin, Sudha Mokkapati

Materials Science & Engineering

Research output: Contribution to journal › Article › Research › peer-review

32 Citations (Scopus)

Abstract

Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe₂/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe₂ was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe₂/ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe₂/ZnO photodiode can operate under self-powered mode over a broad spectrum.

Original language	English
Article number	110185
Number of pages	8
Journal	Materials & Design
Volume	212
DOIs	https://doi.org/10.1016/j.matdes.2021.110185
Publication status	Published - 15 Dec 2021

Keywords

Molybdenum disulphide
Self-powered photodetector
Van der Waals
Zinc oxide

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10.1016/j.matdes.2021.110185

Cite this

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title = "Self-powered MoSe2/ZnO heterojunction photodetectors with current rectification effect and broadband detection",

abstract = "Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2/ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2/ZnO photodiode can operate under self-powered mode over a broad spectrum.",

keywords = "Molybdenum disulphide, Self-powered photodetector, Van der Waals, Zinc oxide",

author = "Zhichen Wan and Haoran Mu and Zhuo Dong and Sigui Hu and Wenzhi Yu and Shenghuang Lin and Sudha Mokkapati",

note = "Funding Information: Zhichen Wan and Haoran Mu contributed equally to this work. This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF). This work is in part financially supported by the Starting Research Fund from Songshan Lake Materials Laboratory . Publisher Copyright: {\textcopyright} 2021",

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doi = "10.1016/j.matdes.2021.110185",

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AU - Wan, Zhichen

AU - Mu, Haoran

AU - Dong, Zhuo

AU - Hu, Sigui

AU - Yu, Wenzhi

AU - Lin, Shenghuang

AU - Mokkapati, Sudha

N1 - Funding Information: Zhichen Wan and Haoran Mu contributed equally to this work. This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF). This work is in part financially supported by the Starting Research Fund from Songshan Lake Materials Laboratory . Publisher Copyright: © 2021

PY - 2021/12/15

Y1 - 2021/12/15

N2 - Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2/ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2/ZnO photodiode can operate under self-powered mode over a broad spectrum.

AB - Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2/ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2/ZnO photodiode can operate under self-powered mode over a broad spectrum.

KW - Molybdenum disulphide

KW - Self-powered photodetector

KW - Van der Waals

KW - Zinc oxide

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DO - 10.1016/j.matdes.2021.110185

M3 - Article

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SN - 0264-1275

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JO - Materials & Design

JF - Materials & Design

M1 - 110185

ER -

Self-powered MoSe2/ZnO heterojunction photodetectors with current rectification effect and broadband detection

Abstract

Keywords

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Melbourne Centre for Nanofabrication

Cite this

Self-powered MoSe₂/ZnO heterojunction photodetectors with current rectification effect and broadband detection