Projects per year
Abstract
Growth of a uniform oxide film with a tunable thickness on two-dimensional transition metal dichalcogenides is of great importance for electronic and optoelectronic applications. Here we demonstrate homogeneous surface oxidation of atomically thin WSe2 with a self-limiting thickness from single- to trilayers. Exposure to ozone (O3) below 100 °C leads to the lateral growth of tungsten oxide selectively along selenium zigzag-edge orientations on WSe2. With further O3 exposure, the oxide regions coalesce and oxidation terminates leaving a uniform thickness oxide film on top of unoxidized WSe2. At higher temperatures, oxidation evolves in the layer-by-layer regime up to trilayers. The oxide films formed on WSe2 are nearly atomically flat. Using photoluminescence and Raman spectroscopy, we find that the underlying single-layer WSe2 is decoupled from the top oxide but hole-doped. Our findings offer a new strategy for creating atomically thin heterostructures of semiconductors and insulating oxides with potential for applications in electronic devices.
Original language | English |
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Pages (from-to) | 2067-2073 |
Number of pages | 7 |
Journal | Nano Letters |
Volume | 15 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2015 |
Keywords
- Layered transition metal dichalcogenides
- tungsten diselenide
- oxidation
- Raman spectroscopy
- photoluminescence
- X-ray photoelectron spectroscopy
- ab initio calculations
Projects
- 1 Finished
-
Understanding and Controlling the Properties of Dirac Electronic Materials
Fuhrer, M. (Primary Chief Investigator (PCI))
Australian Research Council (ARC)
14/01/13 → 30/09/18
Project: Research