Self-limiting chemical vapor deposition of an ultra-thin silicon oxide film using tri-(tert-butoxy)silanol

K. A. Miller, C. John, K. Z. Zhang, K. T. Nicholson, F. R. McFeely, M. M. Banaszak Holl

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7 Citations (Scopus)

Abstract

Tri-(tert-butoxy)silanol (tBOS) rapidly forms a self-limited ∼10-Å-thick silicon oxide film upon exposure to a Si(100)-2×1 surface at 300 K. The majority of hydrocarbon spontaneously desorbs at this temperature. Heating to ∼700 K removes the remaining tert-butoxy groups. The films were characterized by conventional X-ray photoelectron spectroscopy (XPS), synchrotron XPS of the Si 2p core-level and valence band regions, and reflection absorption infrared spectroscopy (RAIRS).

Original languageEnglish
Pages (from-to)78-82
Number of pages5
JournalThin Solid Films
Volume397
Issue number1-2
DOIs
Publication statusPublished - 1 Nov 2001
Externally publishedYes

Keywords

  • Chemical vapor deposition
  • Dielectrics
  • Photoelectron spectroscopy
  • Silicon oxide

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