Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing

Qian Gao, Dhruv Saxena, Fan Wang, Lan Fu, Sudha Mokkapati, Yanan Guo, Li Li, Jennifer Wong-Leung, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish

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164 Citations (Scopus)


We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of μ50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

Original languageEnglish
Pages (from-to)5206-5211
Number of pages6
JournalNano Letters
Issue number9
Publication statusPublished - 10 Sept 2014
Externally publishedYes


  • III-V semiconductors
  • nanowire laser
  • nanowires
  • quantum efficiency
  • selective-area metal-organic vapor-phase epitaxy
  • wurtzite

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