Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration

S. Mokkapati; P. Lever; H. H. Tan; C. Jagadish; K. E. McBean; M. R. Phillips

doi:10.1109/COMMAD.2004.1577543

Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration

S. Mokkapati, P. Lever, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.

Original language	English
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	273-275
Number of pages	3
ISBN (Print)	0780388208, 9780780388208
DOIs	https://doi.org/10.1109/COMMAD.2004.1577543
Publication status	Published - 1 Dec 2005
Externally published	Yes
Event	Conference on Optoelectronic and Microelectronic Materials and Devices 2004 - The University of Queensland, Brisbane, Australia Duration: 8 Dec 2004 → 10 Dec 2004 https://ieeexplore.ieee.org/xpl/conhome/10540/proceeding (Proceedings)

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices 2004
Abbreviated title	COMMAD 2004
Country/Territory	Australia
City	Brisbane
Period	8/12/04 → 10/12/04
Internet address	https://ieeexplore.ieee.org/xpl/conhome/10540/proceeding (Proceedings)

Keywords

Integrated optoelectronic devices
Quantum dot
Selective area epitaxy

Access to Document

10.1109/COMMAD.2004.1577543

Cite this

Mokkapati, S., Lever, P., Tan, H. H., Jagadish, C., McBean, K. E., & Phillips, M. R. (2005). Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 273-275). (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2004.1577543

Mokkapati, S. ; Lever, P. ; Tan, H. H. et al. / Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration. COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. IEEE, Institute of Electrical and Electronics Engineers, 2005. pp. 273-275 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

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title = "Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration",

abstract = "We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.",

keywords = "Integrated optoelectronic devices, Quantum dot, Selective area epitaxy",

author = "S. Mokkapati and P. Lever and Tan, \{H. H.\} and C. Jagadish and McBean, \{K. E.\} and Phillips, \{M. R.\}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/COMMAD.2004.1577543",

language = "English",

isbn = "0780388208",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

pages = "273--275",

booktitle = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings",

address = "United States of America",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices 2004, COMMAD 2004 ; Conference date: 08-12-2004 Through 10-12-2004",

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}

Mokkapati, S, Lever, P, Tan, HH, Jagadish, C, McBean, KE & Phillips, MR 2005, Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, IEEE, Institute of Electrical and Electronics Engineers, pp. 273-275, Conference on Optoelectronic and Microelectronic Materials and Devices 2004, Brisbane, Queensland, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577543

Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration. / Mokkapati, S.; Lever, P.; Tan, H. H. et al.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. IEEE, Institute of Electrical and Electronics Engineers, 2005. p. 273-275 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration

AU - Mokkapati, S.

AU - Lever, P.

AU - Tan, H. H.

AU - Jagadish, C.

AU - McBean, K. E.

AU - Phillips, M. R.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.

AB - We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.

KW - Integrated optoelectronic devices

KW - Quantum dot

KW - Selective area epitaxy

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DO - 10.1109/COMMAD.2004.1577543

M3 - Conference Paper

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SN - 0780388208

SN - 9780780388208

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

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BT - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices 2004

Y2 - 8 December 2004 through 10 December 2004

ER -

Mokkapati S, Lever P, Tan HH, Jagadish C, McBean KE, Phillips MR. Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. IEEE, Institute of Electrical and Electronics Engineers. 2005. p. 273-275. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2004.1577543

Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration

Abstract

Publication series

Conference

Keywords

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