Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration

S. Mokkapati, P. Lever, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

Abstract

We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.

Original languageEnglish
Title of host publicationCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages273-275
Number of pages3
ISBN (Print)0780388208, 9780780388208
DOIs
Publication statusPublished - 1 Dec 2005
Externally publishedYes
EventConference on Optoelectronic and Microelectronic Materials and Devices 2004 - The University of Queensland, Brisbane, Australia
Duration: 8 Dec 200410 Dec 2004
https://ieeexplore.ieee.org/xpl/conhome/10540/proceeding (Proceedings)

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices 2004
Abbreviated titleCOMMAD 2004
Country/TerritoryAustralia
CityBrisbane
Period8/12/0410/12/04
Internet address

Keywords

  • Integrated optoelectronic devices
  • Quantum dot
  • Selective area epitaxy

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