Abstract
InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.
Original language | English |
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Title of host publication | 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 |
Editors | Mariusz Martyniuk, Lorenzo Faraone |
Place of Publication | Piscataway NJ USA |
Publisher | IEEE, Institute of Electrical and Electronics Engineers |
Pages | 252-253 |
Number of pages | 2 |
ISBN (Electronic) | 9781479968688 |
ISBN (Print) | 9781479968671 |
DOIs | |
Publication status | Published - 10 Feb 2014 |
Externally published | Yes |
Event | Conference on Optoelectronic and Microelectronic Materials and Devices 2014 - The University of Western Australia, Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014 https://ieeexplore.ieee.org/xpl/conhome/7023182/proceeding (Proceedings) |
Publication series
Name | 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 |
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Conference
Conference | Conference on Optoelectronic and Microelectronic Materials and Devices 2014 |
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Abbreviated title | COMMAD 2014 |
Country/Territory | Australia |
City | Perth |
Period | 14/12/14 → 17/12/14 |
Internet address |
Keywords
- MOCVD
- nanowire
- selective area epitaxy
- solar cell