Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao, L. Fu, F. Wang, Yanan Guo, Z. Y. Li, K. Peng, Li Li, Z. Li, Y. Wenas, S. Mokkapati, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

1 Citation (Scopus)

Abstract

InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

Original languageEnglish
Title of host publication2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
EditorsMariusz Martyniuk, Lorenzo Faraone
Place of PublicationPiscataway NJ USA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages252-253
Number of pages2
ISBN (Electronic)9781479968688
ISBN (Print)9781479968671
DOIs
Publication statusPublished - 10 Feb 2014
Externally publishedYes
EventConference on Optoelectronic and Microelectronic Materials and Devices 2014 - The University of Western Australia, Perth, Australia
Duration: 14 Dec 201417 Dec 2014
https://ieeexplore.ieee.org/xpl/conhome/7023182/proceeding (Proceedings)

Publication series

Name2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices 2014
Abbreviated titleCOMMAD 2014
CountryAustralia
CityPerth
Period14/12/1417/12/14
Internet address

Keywords

  • MOCVD
  • nanowire
  • selective area epitaxy
  • solar cell

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