Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao; L. Fu; F. Wang; Yanan Guo; Z. Y. Li; K. Peng; Li Li; Z. Li; Y. Wenas; S. Mokkapati; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao, L. Fu, F. Wang, Yanan Guo, Z. Y. Li, K. Peng, Li Li, Z. Li, Y. Wenas, S. Mokkapati, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

1 Citation (Scopus)

Abstract

InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Place of Publication	Piscataway NJ USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	252-253
Number of pages	2
ISBN (Electronic)	9781479968688
ISBN (Print)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038704
Publication status	Published - 10 Feb 2014
Externally published	Yes
Event	Conference on Optoelectronic and Microelectronic Materials and Devices 2014 - The University of Western Australia, Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014 https://ieeexplore.ieee.org/xpl/conhome/7023182/proceeding (Proceedings)

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices 2014
Abbreviated title	COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7023182/proceeding (Proceedings)

Keywords

MOCVD
nanowire
selective area epitaxy
solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/COMMAD.2014.7038704

Cite this

Gao, Q., Fu, L., Wang, F., Guo, Y., Li, Z. Y., Peng, K., Li, L., Li, Z., Wenas, Y., Mokkapati, S., Tan, H. H., & Jagadish, C. (2014). Selective area epitaxial growth of InP nanowire array for solar cell applications. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 252-253). Article 7038704 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2014.7038704

Gao, Q. ; Fu, L. ; Wang, F. et al. / Selective area epitaxial growth of InP nanowire array for solar cell applications. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Piscataway NJ USA : IEEE, Institute of Electrical and Electronics Engineers, 2014. pp. 252-253 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

@inproceedings{3f058381a4a847049599785feea6356a,

title = "Selective area epitaxial growth of InP nanowire array for solar cell applications",

abstract = "InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.",

keywords = "MOCVD, nanowire, selective area epitaxy, solar cell",

author = "Q. Gao and L. Fu and F. Wang and Yanan Guo and Li, {Z. Y.} and K. Peng and Li Li and Z. Li and Y. Wenas and S. Mokkapati and Tan, {H. H.} and C. Jagadish",

year = "2014",

month = feb,

day = "10",

doi = "10.1109/COMMAD.2014.7038704",

language = "English",

isbn = "9781479968671",

series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

pages = "252--253",

editor = "Mariusz Martyniuk and Lorenzo Faraone",

booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

address = "United States of America",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices 2014, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

url = "https://ieeexplore.ieee.org/xpl/conhome/7023182/proceeding",

}

Gao, Q, Fu, L, Wang, F, Guo, Y, Li, ZY, Peng, K, Li, L, Li, Z, Wenas, Y, Mokkapati, S, Tan, HH & Jagadish, C 2014, Selective area epitaxial growth of InP nanowire array for solar cell applications. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038704, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, IEEE, Institute of Electrical and Electronics Engineers, Piscataway NJ USA, pp. 252-253, Conference on Optoelectronic and Microelectronic Materials and Devices 2014, Perth, Western Australia, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications. / Gao, Q.; Fu, L.; Wang, F. et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Piscataway NJ USA: IEEE, Institute of Electrical and Electronics Engineers, 2014. p. 252-253 7038704 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - Selective area epitaxial growth of InP nanowire array for solar cell applications

AU - Gao, Q.

AU - Fu, L.

AU - Wang, F.

AU - Guo, Yanan

AU - Li, Z. Y.

AU - Peng, K.

AU - Li, Li

AU - Li, Z.

AU - Wenas, Y.

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2014/2/10

Y1 - 2014/2/10

N2 - InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

AB - InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

KW - MOCVD

KW - nanowire

KW - selective area epitaxy

KW - solar cell

UR - http://www.scopus.com/inward/record.url?scp=84983201169&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2014.7038704

DO - 10.1109/COMMAD.2014.7038704

M3 - Conference Paper

AN - SCOPUS:84983201169

SN - 9781479968671

T3 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

SP - 252

EP - 253

BT - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

A2 - Martyniuk, Mariusz

A2 - Faraone, Lorenzo

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - Piscataway NJ USA

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

Gao Q, Fu L, Wang F, Guo Y, Li ZY, Peng K et al. Selective area epitaxial growth of InP nanowire array for solar cell applications. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Piscataway NJ USA: IEEE, Institute of Electrical and Electronics Engineers. 2014. p. 252-253. 7038704. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications

Abstract

Publication series

Conference

Keywords

UN SDGs

Access to Document

Other files and links

Cite this