Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors

G. N. Pain, G I Christiansz, R. S. Dickson, G. B. Deacon, B. O. West, K McGregor, R. S. Rowe

Research output: Contribution to journalArticleResearchpeer-review

21 Citations (Scopus)

Abstract

Organometallic feedstocks of cadmium, mercury and tellurium, as well as dopants to create n-type, p-type or diluted magnetic semiconductors, can impose limits on the range of programmable parameters in the MOCVD reactor. The influence of the chosen organometallics on the crystal growth process is critically reviewed.

Original languageEnglish
Pages (from-to)921-929
Number of pages9
JournalPolyhedron
Volume9
Issue number7
DOIs
Publication statusPublished - 1990

Cite this

Pain, G. N. ; Christiansz, G I ; Dickson, R. S. ; Deacon, G. B. ; West, B. O. ; McGregor, K ; Rowe, R. S. / Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors. In: Polyhedron. 1990 ; Vol. 9, No. 7. pp. 921-929.
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Pain, GN, Christiansz, GI, Dickson, RS, Deacon, GB, West, BO, McGregor, K & Rowe, RS 1990, 'Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors', Polyhedron, vol. 9, no. 7, pp. 921-929. https://doi.org/10.1016/S0277-5387(00)84292-8

Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors. / Pain, G. N.; Christiansz, G I; Dickson, R. S.; Deacon, G. B.; West, B. O.; McGregor, K; Rowe, R. S.

In: Polyhedron, Vol. 9, No. 7, 1990, p. 921-929.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Pain, G. N.

AU - Christiansz, G I

AU - Dickson, R. S.

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AU - West, B. O.

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AU - Rowe, R. S.

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