Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors

G. N. Pain; G I Christiansz; R. S. Dickson; G. B. Deacon; B. O. West; K McGregor; R. S. Rowe

doi:10.1016/S0277-5387(00)84292-8

Selection of organometallics for MOCVD of Hg_1-xCd_xTe and doped semiconductors

G. N. Pain, G I Christiansz, R. S. Dickson, G. B. Deacon, B. O. West, K McGregor, R. S. Rowe

School of Chemistry

Research output: Contribution to journal › Article › Research › peer-review

22 Citations (Scopus)

Abstract

Organometallic feedstocks of cadmium, mercury and tellurium, as well as dopants to create n-type, p-type or diluted magnetic semiconductors, can impose limits on the range of programmable parameters in the MOCVD reactor. The influence of the chosen organometallics on the crystal growth process is critically reviewed.

Original language	English
Pages (from-to)	921-929
Number of pages	9
Journal	Polyhedron
Volume	9
Issue number	7
DOIs	https://doi.org/10.1016/S0277-5387(00)84292-8
Publication status	Published - 1990

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10.1016/S0277-5387(00)84292-8

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Cite this

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title = "Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors",

abstract = "Organometallic feedstocks of cadmium, mercury and tellurium, as well as dopants to create n-type, p-type or diluted magnetic semiconductors, can impose limits on the range of programmable parameters in the MOCVD reactor. The influence of the chosen organometallics on the crystal growth process is critically reviewed.",

author = "Pain, {G. N.} and Christiansz, {G I} and Dickson, {R. S.} and Deacon, {G. B.} and West, {B. O.} and K McGregor and Rowe, {R. S.}",

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AU - Pain, G. N.

AU - Christiansz, G I

AU - Dickson, R. S.

AU - Deacon, G. B.

AU - West, B. O.

AU - McGregor, K

AU - Rowe, R. S.

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