Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors

G. N. Pain; G I Christiansz; R. S. Dickson; G. B. Deacon; B. O. West; K McGregor; R. S. Rowe

doi:10.1016/S0277-5387(00)84292-8

Selection of organometallics for MOCVD of Hg_1-xCd_xTe and doped semiconductors

G. N. Pain, G I Christiansz, R. S. Dickson, G. B. Deacon, B. O. West, K McGregor, R. S. Rowe

School of Chemistry

Research output: Contribution to journal › Article › Research › peer-review

23 Citations (Scopus)

Abstract

Organometallic feedstocks of cadmium, mercury and tellurium, as well as dopants to create n-type, p-type or diluted magnetic semiconductors, can impose limits on the range of programmable parameters in the MOCVD reactor. The influence of the chosen organometallics on the crystal growth process is critically reviewed.

Original language	English
Pages (from-to)	921-929
Number of pages	9
Journal	Polyhedron
Volume	9
Issue number	7
DOIs	https://doi.org/10.1016/S0277-5387(00)84292-8
Publication status	Published - 1990

Access to Document

10.1016/S0277-5387(00)84292-8

Cite this

@article{a0ccbaae0caf4778a3a45669f22ec366,

title = "Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors",

abstract = "Organometallic feedstocks of cadmium, mercury and tellurium, as well as dopants to create n-type, p-type or diluted magnetic semiconductors, can impose limits on the range of programmable parameters in the MOCVD reactor. The influence of the chosen organometallics on the crystal growth process is critically reviewed.",

author = "Pain, {G. N.} and Christiansz, {G I} and Dickson, {R. S.} and Deacon, {G. B.} and West, {B. O.} and K McGregor and Rowe, {R. S.}",

year = "1990",

doi = "10.1016/S0277-5387(00)84292-8",

language = "English",

volume = "9",

pages = "921--929",

journal = "Polyhedron",

issn = "0277-5387",

publisher = "Elsevier",

number = "7",

}

TY - JOUR

T1 - Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors

AU - Pain, G. N.

AU - Christiansz, G I

AU - Dickson, R. S.

AU - Deacon, G. B.

AU - West, B. O.

AU - McGregor, K

AU - Rowe, R. S.

PY - 1990

Y1 - 1990

N2 - Organometallic feedstocks of cadmium, mercury and tellurium, as well as dopants to create n-type, p-type or diluted magnetic semiconductors, can impose limits on the range of programmable parameters in the MOCVD reactor. The influence of the chosen organometallics on the crystal growth process is critically reviewed.

AB - Organometallic feedstocks of cadmium, mercury and tellurium, as well as dopants to create n-type, p-type or diluted magnetic semiconductors, can impose limits on the range of programmable parameters in the MOCVD reactor. The influence of the chosen organometallics on the crystal growth process is critically reviewed.

UR - http://www.scopus.com/inward/record.url?scp=0040142819&partnerID=8YFLogxK

U2 - 10.1016/S0277-5387(00)84292-8

DO - 10.1016/S0277-5387(00)84292-8

M3 - Article

AN - SCOPUS:0040142819

VL - 9

SP - 921

EP - 929

JO - Polyhedron

JF - Polyhedron

SN - 0277-5387

IS - 7

ER -

Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors

Abstract

Access to Document

Other files and links

Cite this

Selection of organometallics for MOCVD of Hg_1-xCd_xTe and doped semiconductors