Scattering mechanisms in graphene

Michael S. Fuhrer, Jian Hao Chen, Chaun Jang, Sungjae Cho, Shudong Xiao, Masa Ishigami, William G Cullen, Ellen D. Williams

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review


Graphene is an exciting new condensed matter system, both for the opportunity to observe the physics associated with massless Dirac Fermions in the laboratory, and because of materials parameters which make it attractive for technological applications such as high-frequency transistors and conducting, transparent films. However, only very recently has there emerged a coherent understanding of the processes which govern the charge carrier mobilityand conductivity in graphene. I will discuss experiments performed on atomically-clean[l] graphene on SiO2 in ultra-high vacuum to determine the charge carrier scattering rates from charged impurities[2], lattice defects[ 3], and phonons (graphene acoustic phonons and substrate polar optical phonons)[4], as well as their dependence on dielectric environment[5]. The experiments point out both the promise of the material as well as the technological challenges that lie ahead in realizing better graphene samples.

Original languageEnglish
Title of host publication67th Device Research Conference, DRC 2009
Number of pages1
Publication statusPublished - 11 Dec 2009
Externally publishedYes
EventDevice Research Conference, DRC 2009 - University Park, United States of America
Duration: 22 Jun 200924 Jun 2009
Conference number: 67th


ConferenceDevice Research Conference, DRC 2009
Abbreviated titleDRC 2009
Country/TerritoryUnited States of America
CityUniversity Park

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