Scalable production of a Few-Layer MoS2/WS2 vertical heterojunction array and its application for photodetectors

Yunzhou Xue, Yupeng Zhang, Yan Liu, Hongtao Liu, Jingchao Song, Joice Sophia, Jingying Liu, Zaiquan Xu, Qingyang Xu, Ziyu Wang, Jialu Zheng, Yunqi Liu, Shaojuan Li, Qiaoliang Bao

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Vertical heterojunctions of two two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention recently. A variety of heterojunctions can be constructed by stacking different TMDs to form fundamental building blocks in different optoelectronic devices such as photodetectors, solar cells, and light-emitting diodes. However, these applications are significantly hampered by the challenges of large-scale production of van der Waals stacks of atomically thin materials. Here, we demonstrate scalable production of periodic patterns of few-layer WS2, MoS2, and their vertical heterojunction arrays by a thermal reduction sulfurization process. In this method, a two-step chemical vapor deposition approach was developed to effectively prevent the phase mixing of TMDs in an unpredicted manner, thus affording a well-defined interface between WS2 and MoS2 in the vertical dimension. As a result, large-scale, periodic arrays of few-layer WS2, MoS2, and their vertical heterojunctions can be produced with desired size and density. Photodetectors based on the as-produced MoS2/WS2 vertical heterojunction arrays were fabricated, and a high photoresponsivity of 2.3 A·W-1 at an excitation wavelength of 450 nm was demonstrated. Flexible photodetector devices using MoS2/WS2 heterojunction arrays were also demonstrated with reasonable signal/noise ratio. The approach in this work is also applicable to other TMD materials and can open up the possibilities of producing a variety of vertical van der Waals heterojunctions in a large scale toward optoelectronic applications.

Original languageEnglish
Pages (from-to)573-580
Number of pages8
JournalACS Nano
Volume10
Issue number1
DOIs
Publication statusPublished - 26 Jan 2016

Keywords

  • Flexible device
  • Molybdenum disulfide
  • Photodetector
  • Tungsten disulfide
  • Vertical heterojunction

Cite this

Xue, Yunzhou ; Zhang, Yupeng ; Liu, Yan ; Liu, Hongtao ; Song, Jingchao ; Sophia, Joice ; Liu, Jingying ; Xu, Zaiquan ; Xu, Qingyang ; Wang, Ziyu ; Zheng, Jialu ; Liu, Yunqi ; Li, Shaojuan ; Bao, Qiaoliang. / Scalable production of a Few-Layer MoS2/WS2 vertical heterojunction array and its application for photodetectors. In: ACS Nano. 2016 ; Vol. 10, No. 1. pp. 573-580.
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abstract = "Vertical heterojunctions of two two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention recently. A variety of heterojunctions can be constructed by stacking different TMDs to form fundamental building blocks in different optoelectronic devices such as photodetectors, solar cells, and light-emitting diodes. However, these applications are significantly hampered by the challenges of large-scale production of van der Waals stacks of atomically thin materials. Here, we demonstrate scalable production of periodic patterns of few-layer WS2, MoS2, and their vertical heterojunction arrays by a thermal reduction sulfurization process. In this method, a two-step chemical vapor deposition approach was developed to effectively prevent the phase mixing of TMDs in an unpredicted manner, thus affording a well-defined interface between WS2 and MoS2 in the vertical dimension. As a result, large-scale, periodic arrays of few-layer WS2, MoS2, and their vertical heterojunctions can be produced with desired size and density. Photodetectors based on the as-produced MoS2/WS2 vertical heterojunction arrays were fabricated, and a high photoresponsivity of 2.3 A·W-1 at an excitation wavelength of 450 nm was demonstrated. Flexible photodetector devices using MoS2/WS2 heterojunction arrays were also demonstrated with reasonable signal/noise ratio. The approach in this work is also applicable to other TMD materials and can open up the possibilities of producing a variety of vertical van der Waals heterojunctions in a large scale toward optoelectronic applications.",
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author = "Yunzhou Xue and Yupeng Zhang and Yan Liu and Hongtao Liu and Jingchao Song and Joice Sophia and Jingying Liu and Zaiquan Xu and Qingyang Xu and Ziyu Wang and Jialu Zheng and Yunqi Liu and Shaojuan Li and Qiaoliang Bao",
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Xue, Y, Zhang, Y, Liu, Y, Liu, H, Song, J, Sophia, J, Liu, J, Xu, Z, Xu, Q, Wang, Z, Zheng, J, Liu, Y, Li, S & Bao, Q 2016, 'Scalable production of a Few-Layer MoS2/WS2 vertical heterojunction array and its application for photodetectors' ACS Nano, vol. 10, no. 1, pp. 573-580. https://doi.org/10.1021/acsnano.5b05596

Scalable production of a Few-Layer MoS2/WS2 vertical heterojunction array and its application for photodetectors. / Xue, Yunzhou; Zhang, Yupeng; Liu, Yan; Liu, Hongtao; Song, Jingchao; Sophia, Joice; Liu, Jingying; Xu, Zaiquan; Xu, Qingyang; Wang, Ziyu; Zheng, Jialu; Liu, Yunqi; Li, Shaojuan; Bao, Qiaoliang.

In: ACS Nano, Vol. 10, No. 1, 26.01.2016, p. 573-580.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Scalable production of a Few-Layer MoS2/WS2 vertical heterojunction array and its application for photodetectors

AU - Xue, Yunzhou

AU - Zhang, Yupeng

AU - Liu, Yan

AU - Liu, Hongtao

AU - Song, Jingchao

AU - Sophia, Joice

AU - Liu, Jingying

AU - Xu, Zaiquan

AU - Xu, Qingyang

AU - Wang, Ziyu

AU - Zheng, Jialu

AU - Liu, Yunqi

AU - Li, Shaojuan

AU - Bao, Qiaoliang

PY - 2016/1/26

Y1 - 2016/1/26

N2 - Vertical heterojunctions of two two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention recently. A variety of heterojunctions can be constructed by stacking different TMDs to form fundamental building blocks in different optoelectronic devices such as photodetectors, solar cells, and light-emitting diodes. However, these applications are significantly hampered by the challenges of large-scale production of van der Waals stacks of atomically thin materials. Here, we demonstrate scalable production of periodic patterns of few-layer WS2, MoS2, and their vertical heterojunction arrays by a thermal reduction sulfurization process. In this method, a two-step chemical vapor deposition approach was developed to effectively prevent the phase mixing of TMDs in an unpredicted manner, thus affording a well-defined interface between WS2 and MoS2 in the vertical dimension. As a result, large-scale, periodic arrays of few-layer WS2, MoS2, and their vertical heterojunctions can be produced with desired size and density. Photodetectors based on the as-produced MoS2/WS2 vertical heterojunction arrays were fabricated, and a high photoresponsivity of 2.3 A·W-1 at an excitation wavelength of 450 nm was demonstrated. Flexible photodetector devices using MoS2/WS2 heterojunction arrays were also demonstrated with reasonable signal/noise ratio. The approach in this work is also applicable to other TMD materials and can open up the possibilities of producing a variety of vertical van der Waals heterojunctions in a large scale toward optoelectronic applications.

AB - Vertical heterojunctions of two two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention recently. A variety of heterojunctions can be constructed by stacking different TMDs to form fundamental building blocks in different optoelectronic devices such as photodetectors, solar cells, and light-emitting diodes. However, these applications are significantly hampered by the challenges of large-scale production of van der Waals stacks of atomically thin materials. Here, we demonstrate scalable production of periodic patterns of few-layer WS2, MoS2, and their vertical heterojunction arrays by a thermal reduction sulfurization process. In this method, a two-step chemical vapor deposition approach was developed to effectively prevent the phase mixing of TMDs in an unpredicted manner, thus affording a well-defined interface between WS2 and MoS2 in the vertical dimension. As a result, large-scale, periodic arrays of few-layer WS2, MoS2, and their vertical heterojunctions can be produced with desired size and density. Photodetectors based on the as-produced MoS2/WS2 vertical heterojunction arrays were fabricated, and a high photoresponsivity of 2.3 A·W-1 at an excitation wavelength of 450 nm was demonstrated. Flexible photodetector devices using MoS2/WS2 heterojunction arrays were also demonstrated with reasonable signal/noise ratio. The approach in this work is also applicable to other TMD materials and can open up the possibilities of producing a variety of vertical van der Waals heterojunctions in a large scale toward optoelectronic applications.

KW - Flexible device

KW - Molybdenum disulfide

KW - Photodetector

KW - Tungsten disulfide

KW - Vertical heterojunction

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