Room temperature in-plane ferroelectricity in van der Waals In2Se3

Changxi Zheng, Lei Yu, Lin Zhu, James L. Collins, Dohyung Kim, Yaoding Lou, Chao Xu, Meng Li, Zheng Wei, Yupeng Zhang, Mark T. Edmonds, Shiqiang Li, Jan Seidel, Ye Zhu, Jefferson Zhe Liu, Wen Xin Tang, Michael S. Fuhrer

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52 Citations (Scopus)

Abstract

Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, b′-In2Se3. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In2Se3. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.

Original languageEnglish
Article numbereaar7720
Number of pages7
JournalScience Advances
Volume4
Issue number7
DOIs
Publication statusPublished - 13 Jul 2018

Keywords

  • Indium
  • der Waals
  • Heterojunctions

Cite this

Zheng, C., Yu, L., Zhu, L., Collins, J. L., Kim, D., Lou, Y., Xu, C., Li, M., Wei, Z., Zhang, Y., Edmonds, M. T., Li, S., Seidel, J., Zhu, Y., Liu, J. Z., Tang, W. X., & Fuhrer, M. S. (2018). Room temperature in-plane ferroelectricity in van der Waals In2Se3. Science Advances, 4(7), [eaar7720]. https://doi.org/10.1126/sciadv.aar7720