Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3

Xuan Cheng, Jivika Sullaphen, Matthew Weyland, Hongwei Liu, Nagarajan Valanoor

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO3) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO3 substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L2,3 peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface.This sheds light into the origin of the previously postulated minority carriers’ model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].
Original languageEnglish
Article number032109
Number of pages7
JournalAPL Materials
Volume2
Issue number3
DOIs
Publication statusPublished - 2014

Cite this

@article{32365cef88eb489cb48c51ba89dbfc1d,
title = "Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3",
abstract = "Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO3) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO3 substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L2,3 peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface.This sheds light into the origin of the previously postulated minority carriers’ model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].",
author = "Xuan Cheng and Jivika Sullaphen and Matthew Weyland and Hongwei Liu and Nagarajan Valanoor",
year = "2014",
doi = "10.1063/1.4869457",
language = "English",
volume = "2",
journal = "APL Materials",
issn = "2166-532X",
publisher = "AIP Publishing",
number = "3",

}

Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3. / Cheng, Xuan; Sullaphen, Jivika; Weyland, Matthew; Liu, Hongwei; Valanoor, Nagarajan.

In: APL Materials, Vol. 2, No. 3, 032109, 2014.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3

AU - Cheng, Xuan

AU - Sullaphen, Jivika

AU - Weyland, Matthew

AU - Liu, Hongwei

AU - Valanoor, Nagarajan

PY - 2014

Y1 - 2014

N2 - Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO3) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO3 substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L2,3 peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface.This sheds light into the origin of the previously postulated minority carriers’ model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].

AB - Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO3) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO3 substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L2,3 peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface.This sheds light into the origin of the previously postulated minority carriers’ model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].

UR - http://scitation.aip.org/content/aip/journal/aplmater/2/3/10.1063/1.4869457

U2 - 10.1063/1.4869457

DO - 10.1063/1.4869457

M3 - Article

VL - 2

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 3

M1 - 032109

ER -