Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3

Xuan Cheng; Jivika Sullaphen; Matthew Weyland; Hongwei Liu; Nagarajan Valanoor

doi:10.1063/1.4869457

Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO₃

Xuan Cheng, Jivika Sullaphen, Matthew Weyland, Hongwei Liu, Nagarajan Valanoor

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Abstract

Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO₃) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO₃ substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L_2,3 peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface.This sheds light into the origin of the previously postulated minority carriers’ model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].

Original language	English
Article number	032109
Number of pages	7
Journal	APL Materials
Volume	2
Issue number	3
DOIs	https://doi.org/10.1063/1.4869457
Publication status	Published - 2014

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10.1063/1.4869457

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title = "Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3",

abstract = "Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO3) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO3 substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L2,3 peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface.This sheds light into the origin of the previously postulated minority carriers{\textquoteright} model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].",

author = "Xuan Cheng and Jivika Sullaphen and Matthew Weyland and Hongwei Liu and Nagarajan Valanoor",

year = "2014",

doi = "10.1063/1.4869457",

language = "English",

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T1 - Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3

AU - Cheng, Xuan

AU - Sullaphen, Jivika

AU - Weyland, Matthew

AU - Liu, Hongwei

AU - Valanoor, Nagarajan

PY - 2014

Y1 - 2014

N2 - Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO3) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO3 substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L2,3 peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface.This sheds light into the origin of the previously postulated minority carriers’ model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].

AB - Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO3) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO3 substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L2,3 peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface.This sheds light into the origin of the previously postulated minority carriers’ model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].

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JO - APL Materials

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Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO₃

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Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3

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Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO₃