TY - JOUR
T1 - Role of injection barrier in capacitance-voltage measurements of organic devices
AU - Nigam, Akash
AU - Nair, Pradeep R
AU - Premaratne, Malin
AU - Rao, Valipe Ramgopal
PY - 2014
Y1 - 2014
N2 - Capacitance-voltage (C-V) measurements represent a very useful technique, however, its usage in organic devices has been a subject of debate because of the role played by the ambient-induced unintentional doping. In this letter, we show that, contrary to the current understanding, prolonged ambient exposure does not significantly increase the unintentional doping density of organic semiconductors (OSCs). Our C-V measurements and detailed numerical simulations clearly indicate that the observed dispersion in C-V characteristics can be attributed to the variation in the carrier injection barrier at the OSC/electrode interface. An analytical relation between the injection barrier and the response time is derived to describe the C-V characteristics of organic devices.
AB - Capacitance-voltage (C-V) measurements represent a very useful technique, however, its usage in organic devices has been a subject of debate because of the role played by the ambient-induced unintentional doping. In this letter, we show that, contrary to the current understanding, prolonged ambient exposure does not significantly increase the unintentional doping density of organic semiconductors (OSCs). Our C-V measurements and detailed numerical simulations clearly indicate that the observed dispersion in C-V characteristics can be attributed to the variation in the carrier injection barrier at the OSC/electrode interface. An analytical relation between the injection barrier and the response time is derived to describe the C-V characteristics of organic devices.
UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6784309
U2 - 10.1109/LED.2014.2313411
DO - 10.1109/LED.2014.2313411
M3 - Article
SN - 0741-3106
VL - 35
SP - 581
EP - 583
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 5
ER -