Role of injection barrier in capacitance-voltage measurements of organic devices

Akash Nigam, Pradeep R Nair, Malin Premaratne, Valipe Ramgopal Rao

Research output: Contribution to journalArticleOtherpeer-review

15 Citations (Scopus)


Capacitance-voltage (C-V) measurements represent a very useful technique, however, its usage in organic devices has been a subject of debate because of the role played by the ambient-induced unintentional doping. In this letter, we show that, contrary to the current understanding, prolonged ambient exposure does not significantly increase the unintentional doping density of organic semiconductors (OSCs). Our C-V measurements and detailed numerical simulations clearly indicate that the observed dispersion in C-V characteristics can be attributed to the variation in the carrier injection barrier at the OSC/electrode interface. An analytical relation between the injection barrier and the response time is derived to describe the C-V characteristics of organic devices.
Original languageEnglish
Pages (from-to)581 - 583
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - 2014

Cite this