Robust zero-field Skyrmion formation in FeGe epitaxial thin films

J. C. Gallagher, K. Y. Meng, J. T. Brangham, H. L. Wang, B. D. Esser, D. W. McComb, F. Y. Yang

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Abstract

B20 phase magnetic materials have been of significant interest because they enable magnetic Skyrmions. One major effort in this emerging field is the stabilization of Skyrmions at room temperature and zero magnetic field. We grow phase-pure, high crystalline quality FeGe epitaxial films on Si(111). Hall effect measurements reveal a strong topological Hall effect after subtracting the ordinary and anomalous Hall effects, demonstrating the formation of high density Skyrmions in FeGe films between 5 and 275 K. In particular, a substantial topological Hall effect was observed at a zero magnetic field, showing a robust Skyrmion phase without the need of an external magnetic field.

Original languageEnglish
Article number027201
Number of pages5
JournalPhysical Review Letters
Volume118
Issue number2
DOIs
Publication statusPublished - 9 Jan 2017
Externally publishedYes

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