Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]

Aiswarya Pradeepkumar, Neeraj Mishra, Atieh Ranjbar Kermany, John J. Boeckl, Jack Hellerstedt, Michael S. Fuhrer, Francesca Iacopi

Research output: Contribution to journalComment / DebateOtherpeer-review

4 Citations (Scopus)
Original languageEnglish
Article number196102
JournalApplied Physics Letters
Volume109
Issue number19
DOIs
Publication statusPublished - 7 Nov 2016

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