Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H 8Si 8O 12 clusters

K. T. Nicholson; K. Z. Zhang; M. M. Banaszak Holl; F. R. McFeely

doi:10.1063/1.1469662

Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H ₈Si ₈O ₁₂ clusters

K. T. Nicholson, K. Z. Zhang, M. M. Banaszak Holl, F. R. McFeely

Research output: Contribution to journal › Article › Research › peer-review

3 Citations (Scopus)

Abstract

Reflection-absorption infrared spectroscopy has been employed to observe Si-H bonds within a model, ultrathin silicon oxide. Upon heating a monolayer of H ₈Si ₈O ₁₂/Si(100-2×1 to 700°C, Si-H bonds as a part of HSiO ₃ entities are still detected within the oxide layer after cooling. These fragments appear to be stable to temperatures of at least 850°C. Reversible hydrogen/deuterium exchange for these entities is also directly observed.

Original language	English
Pages (from-to)	9043-9048
Number of pages	6
Journal	Journal of Applied Physics
Volume	91
Issue number	11
DOIs	https://doi.org/10.1063/1.1469662
Publication status	Published - 1 Jun 2002
Externally published	Yes

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abstract = "Reflection-absorption infrared spectroscopy has been employed to observe Si-H bonds within a model, ultrathin silicon oxide. Upon heating a monolayer of H 8Si 8O 12/Si(100-2×1 to 700°C, Si-H bonds as a part of HSiO 3 entities are still detected within the oxide layer after cooling. These fragments appear to be stable to temperatures of at least 850°C. Reversible hydrogen/deuterium exchange for these entities is also directly observed.",

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AU - Nicholson, K. T.

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AU - McFeely, F. R.

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AB - Reflection-absorption infrared spectroscopy has been employed to observe Si-H bonds within a model, ultrathin silicon oxide. Upon heating a monolayer of H 8Si 8O 12/Si(100-2×1 to 700°C, Si-H bonds as a part of HSiO 3 entities are still detected within the oxide layer after cooling. These fragments appear to be stable to temperatures of at least 850°C. Reversible hydrogen/deuterium exchange for these entities is also directly observed.

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Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H 8Si 8O 12 clusters

Abstract

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Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H ₈Si ₈O ₁₂ clusters