Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides

Anthony Ayari, Enrique Cobas, Ololade Ogundadegbe, Michael S. Fuhrer

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Abstract

Ultrathin crystals of the layered transition-metal dichalcogenide Mo S2 (semiconducting) and Ta S2 (metallic) were obtained by mechanical peeling or chemical exfoliation techniques and electrically contacted using electron-beam lithography. The Mo S2 devices showed high field-effect mobility in the tens of cm2 V s and an on/off ratio higher than 105. The Ta S2 devices remained metallic despite the fabrication process and showed an enhancement of the superconducting transition temperature and disappearance of the charge density wave phase anomaly at low temperature.

Original languageEnglish
Article number014507
JournalJournal of Applied Physics
Volume101
Issue number1
DOIs
Publication statusPublished - 24 Jan 2007
Externally publishedYes

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