Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Loren Pfeiffer; Julia M. Phillips; K. E. Luther; K. W. West; J. L. Batstone; F. A. Stevie; J. E.A. Maurits

doi:10.1063/1.98175

Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Loren Pfeiffer, Julia M. Phillips, K. E. Luther, K. W. West, J. L. Batstone, F. A. Stevie, J. E.A. Maurits

Research output: Contribution to journal › Article › Research › peer-review

10 Citations (Scopus)

Abstract

The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

Original language	English
Pages (from-to)	466-468
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	8
DOIs	https://doi.org/10.1063/1.98175
Publication status	Published - 1 Dec 1987
Externally published	Yes

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title = "Rapid thermal processing to improve the epitaxy of (100) silicon on (1{\=1}02) sapphire",

abstract = "The heteroepitaxial quality of (100) Si films on (1{\=1}02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-{\AA} (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.",

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AU - Pfeiffer, Loren

AU - Phillips, Julia M.

AU - Luther, K. E.

AU - West, K. W.

AU - Batstone, J. L.

AU - Stevie, F. A.

AU - Maurits, J. E.A.

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N2 - The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

AB - The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

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Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Abstract

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