Radiative decay rates of impurity states in semiconductor nanocrystals

Vadim K Turkov, Alexander V Baranov, Anatoly V Fedorov, Ivan Rukhlenko

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)

Abstract

Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.
Original languageEnglish
Article number107126
Pages (from-to)1 - 6
Number of pages6
JournalAIP Advances
Volume5
Issue number10
DOIs
Publication statusPublished - 2015

Keywords

  • Nanocrystals
  • Doped semiconductor nanocrystals
  • Semiconductor devices
  • Radiative decay rates

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