Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy

Inseok Yang, Xu Zhang, Changlin Zheng, Qian Gao, Ziyuan Li, Li Li, Mark N. Lockrey, Hieu Nguyen, Philippe Caroff, Joanne Etheridge, Hark Hoe Tan, Chennupati Jagadish, Jennifer Wong-Leung, Lan Fu

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6 Citations (Scopus)

Abstract

III-V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In particular, the three-dimensional growth mechanism of MQWs embedded in a NW structure by SAE is expected to be different from that of those grown in a planar structure or with a catalyst and has not yet been thoroughly investigated. In this work, we reveal a distinctive radial growth evolution of InGaAs/InP MQW NWs grown by the SAE metal organic vapor-phase epitaxy (MOVPE) technique. We observe the formation of zinc blende (ZB) QW discs induced by the axial InGaAs QW growth on the wurtzite (WZ) base-InP NW and propose it as the key factor driving the overall structure of radial growth. The role of the ZB-to-WZ change in the driving of the overall growth evolution is supported by a growth formalism, taking into account the formation-energy difference between different facets. Despite a polytypic crystal structure with mixed ZB and WZ phases across the MQW region, the NWs exhibit high uniformity and desirable QW spatial layout with bright room-temperature photoluminescence at an optical communication wavelength of ∼1.3 μm, which is promising for the future development of high-efficiency light-emitting devices.

Original languageEnglish
Pages (from-to)10374-10382
Number of pages9
JournalACS Nano
Volume12
Issue number10
DOIs
Publication statusPublished - 2018

Keywords

  • growth mechanism
  • III-V compound semiconductors
  • InGaAs/InP quantum wells
  • MOVPE
  • nanowires
  • selective-area epitaxy

Cite this

Yang, I., Zhang, X., Zheng, C., Gao, Q., Li, Z., Li, L., Lockrey, M. N., Nguyen, H., Caroff, P., Etheridge, J., Tan, H. H., Jagadish, C., Wong-Leung, J., & Fu, L. (2018). Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy. ACS Nano, 12(10), 10374-10382. https://doi.org/10.1021/acsnano.8b05771