Quantum transport in ultra-scaled phosphorous-doped silicon nanowires

Hoon Ryu; S. Lee; B. Weber; S Mahapatra; M. Y. Simmons; Lloyd C L Hollenberg; Gerhard Klimeck

doi:10.1109/SNW.2010.5562585

Quantum transport in ultra-scaled phosphorous-doped silicon nanowires

Hoon Ryu
, S. Lee
, B. Weber
, S Mahapatra
, M. Y. Simmons
, Lloyd C L Hollenberg
, Gerhard Klimeck

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

3 Citations (Scopus)

Abstract

Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schrödinger-Poisson equation. Transport through donor bands is observed in [110] Si:P NW at low temperature. The semi-metallic conductance computed in the ballistic regime agrees well with the experiment. Sensitivity of the NW properties on doping constant and placement disorder on the channel is addressed. The modeling confirms that the nanowires are semi-metallic and transport can be gate modulated.

Original language	English
Title of host publication	2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs	https://doi.org/10.1109/SNW.2010.5562585
Publication status	Published - 2010
Event	2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States of America Duration: 13 Jun 2010 → 14 Jun 2010

Conference

Conference	2010 15th Silicon Nanoelectronics Workshop, SNW 2010
Country/Territory	United States of America
City	Honolulu, HI
Period	13/06/10 → 14/06/10

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@inproceedings{a60a216e9e744e5682425fc95a615020,

title = "Quantum transport in ultra-scaled phosphorous-doped silicon nanowires",

abstract = "Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schr{\"o}dinger-Poisson equation. Transport through donor bands is observed in [110] Si:P NW at low temperature. The semi-metallic conductance computed in the ballistic regime agrees well with the experiment. Sensitivity of the NW properties on doping constant and placement disorder on the channel is addressed. The modeling confirms that the nanowires are semi-metallic and transport can be gate modulated.",

author = "Hoon Ryu and S. Lee and B. Weber and S Mahapatra and Simmons, \{M. Y.\} and Hollenberg, \{Lloyd C L\} and Gerhard Klimeck",

year = "2010",

doi = "10.1109/SNW.2010.5562585",

language = "English",

isbn = "9781424477272",

booktitle = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

note = "2010 15th Silicon Nanoelectronics Workshop, SNW 2010 ; Conference date: 13-06-2010 Through 14-06-2010",

}

TY - GEN

T1 - Quantum transport in ultra-scaled phosphorous-doped silicon nanowires

AU - Ryu, Hoon

AU - Lee, S.

AU - Weber, B.

AU - Mahapatra, S

AU - Simmons, M. Y.

AU - Hollenberg, Lloyd C L

AU - Klimeck, Gerhard

PY - 2010

Y1 - 2010

N2 - Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schrödinger-Poisson equation. Transport through donor bands is observed in [110] Si:P NW at low temperature. The semi-metallic conductance computed in the ballistic regime agrees well with the experiment. Sensitivity of the NW properties on doping constant and placement disorder on the channel is addressed. The modeling confirms that the nanowires are semi-metallic and transport can be gate modulated.

AB - Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schrödinger-Poisson equation. Transport through donor bands is observed in [110] Si:P NW at low temperature. The semi-metallic conductance computed in the ballistic regime agrees well with the experiment. Sensitivity of the NW properties on doping constant and placement disorder on the channel is addressed. The modeling confirms that the nanowires are semi-metallic and transport can be gate modulated.

UR - https://www.scopus.com/pages/publications/77957990634

U2 - 10.1109/SNW.2010.5562585

DO - 10.1109/SNW.2010.5562585

M3 - Conference Paper

AN - SCOPUS:77957990634

SN - 9781424477272

BT - 2010 Silicon Nanoelectronics Workshop, SNW 2010

T2 - 2010 15th Silicon Nanoelectronics Workshop, SNW 2010

Y2 - 13 June 2010 through 14 June 2010

ER -

Quantum transport in ultra-scaled phosphorous-doped silicon nanowires

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