Quantum dots and nanowires for optoelectronic device applications

Q. Gao; Y. Kim; H. J. Joyce; P. Lever; S. Mokkapati; M. Buda; H. H. Tan; C. Jagadish

doi:10.1109/ICTON.2006.248327

Quantum dots and nanowires for optoelectronic device applications

Q. Gao
, Y. Kim
, H. J. Joyce
, P. Lever
, S. Mokkapati
, M. Buda
, H. H. Tan
, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper.

Original language	English
Title of host publication	2006 International Conference on Transparent Optical Networks, ICTON 2006
Pages	242-245
Number of pages	4
DOIs	https://doi.org/10.1109/ICTON.2006.248327
Publication status	Published - 1 Dec 2006
Externally published	Yes
Event	2006 International Conference on Transparent Optical Networks, ICTON 2006 - Nottingham, United Kingdom Duration: 18 Jun 2006 → 22 Jun 2006

Publication series

Name	2006 International Conference on Transparent Optical Networks
Volume	2

Conference

Conference	2006 International Conference on Transparent Optical Networks, ICTON 2006
Country/Territory	United Kingdom
City	Nottingham
Period	18/06/06 → 22/06/06

Keywords

InGaAs
Lasers
Nanowire
Quantum dots
Selective area epitaxy

Access to Document

10.1109/ICTON.2006.248327

Cite this

Gao, Q., Kim, Y., Joyce, H. J., Lever, P., Mokkapati, S., Buda, M., Tan, H. H., & Jagadish, C. (2006). Quantum dots and nanowires for optoelectronic device applications. In 2006 International Conference on Transparent Optical Networks, ICTON 2006 (pp. 242-245). Article 4013723 (2006 International Conference on Transparent Optical Networks; Vol. 2). https://doi.org/10.1109/ICTON.2006.248327

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title = "Quantum dots and nanowires for optoelectronic device applications",

abstract = "InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper.",

keywords = "InGaAs, Lasers, Nanowire, Quantum dots, Selective area epitaxy",

author = "Q. Gao and Y. Kim and Joyce, \{H. J.\} and P. Lever and S. Mokkapati and M. Buda and Tan, \{H. H.\} and C. Jagadish",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/ICTON.2006.248327",

language = "English",

isbn = "1424402360",

series = "2006 International Conference on Transparent Optical Networks",

pages = "242--245",

booktitle = "2006 International Conference on Transparent Optical Networks, ICTON 2006",

note = "2006 International Conference on Transparent Optical Networks, ICTON 2006 ; Conference date: 18-06-2006 Through 22-06-2006",

}

Gao, Q, Kim, Y, Joyce, HJ, Lever, P, Mokkapati, S, Buda, M, Tan, HH & Jagadish, C 2006, Quantum dots and nanowires for optoelectronic device applications. in 2006 International Conference on Transparent Optical Networks, ICTON 2006., 4013723, 2006 International Conference on Transparent Optical Networks, vol. 2, pp. 242-245, 2006 International Conference on Transparent Optical Networks, ICTON 2006, Nottingham, United Kingdom, 18/06/06. https://doi.org/10.1109/ICTON.2006.248327

Quantum dots and nanowires for optoelectronic device applications. / Gao, Q.; Kim, Y.; Joyce, H. J. et al.
2006 International Conference on Transparent Optical Networks, ICTON 2006. 2006. p. 242-245 4013723 (2006 International Conference on Transparent Optical Networks; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - Quantum dots and nanowires for optoelectronic device applications

AU - Gao, Q.

AU - Kim, Y.

AU - Joyce, H. J.

AU - Lever, P.

AU - Mokkapati, S.

AU - Buda, M.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper.

AB - InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper.

KW - InGaAs

KW - Lasers

KW - Nanowire

KW - Quantum dots

KW - Selective area epitaxy

UR - https://www.scopus.com/pages/publications/34250686302

U2 - 10.1109/ICTON.2006.248327

DO - 10.1109/ICTON.2006.248327

M3 - Conference Paper

AN - SCOPUS:34250686302

SN - 1424402360

SN - 9781424402366

T3 - 2006 International Conference on Transparent Optical Networks

SP - 242

EP - 245

BT - 2006 International Conference on Transparent Optical Networks, ICTON 2006

T2 - 2006 International Conference on Transparent Optical Networks, ICTON 2006

Y2 - 18 June 2006 through 22 June 2006

ER -

Quantum dots and nanowires for optoelectronic device applications

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Conference

Keywords

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