Quantum dots and nanowires for optoelectronic device applications

Q. Gao, Y. Kim, H. J. Joyce, P. Lever, S. Mokkapati, M. Buda, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

Abstract

InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper.

Original languageEnglish
Title of host publication2006 International Conference on Transparent Optical Networks, ICTON 2006
Pages242-245
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event2006 International Conference on Transparent Optical Networks, ICTON 2006 - Nottingham, United Kingdom
Duration: 18 Jun 200622 Jun 2006

Publication series

Name2006 International Conference on Transparent Optical Networks
Volume2

Conference

Conference2006 International Conference on Transparent Optical Networks, ICTON 2006
CountryUnited Kingdom
CityNottingham
Period18/06/0622/06/06

Keywords

  • InGaAs
  • Lasers
  • Nanowire
  • Quantum dots
  • Selective area epitaxy

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