Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

M. S. Fuhrer, M. T. Edmonds, D. Culcer, M. Nadeem, X. Wang, N. Medhekar, Y. Yin, J. H. Cole

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearch

2 Citations (Scopus)


A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ('on', with conducting edge states) to a conventional insulator ('off'), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na3Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting (IEDM 2021)
Place of PublicationPiscataway NJ United States
PublisherIEEE, Institute of Electrical and Electronics Engineers
Number of pages4
ISBN (Electronic)9781665425728
ISBN (Print)9781665425735
Publication statusPublished - 2021
EventIEEE International Electron Devices Meeting (IEDM) 2021 - San Francisco, United States of America
Duration: 11 Dec 202116 Dec 2021

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


ConferenceIEEE International Electron Devices Meeting (IEDM) 2021
Abbreviated titleIEDM 2021
Country/TerritoryUnited States of America
CitySan Francisco
Internet address

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