Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

M. S. Fuhrer, M. T. Edmonds, D. Culcer, M. Nadeem, X. Wang, N. Medhekar, Y. Yin, J. H. Cole

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearch

2 Citations (Scopus)

Abstract

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ('on', with conducting edge states) to a conventional insulator ('off'), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na3Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting (IEDM 2021)
Place of PublicationPiscataway NJ United States
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages38.2.1-38.2.4
Number of pages4
ISBN (Electronic)9781665425728
ISBN (Print)9781665425735
DOIs
Publication statusPublished - 2021
EventIEEE International Electron Devices Meeting (IEDM) 2021 - San Francisco, United States of America
Duration: 11 Dec 202116 Dec 2021
https://ieeexplore.ieee.org/xpl/conhome/9720433/proceeding

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2021-December
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting (IEDM) 2021
Abbreviated titleIEDM 2021
Country/TerritoryUnited States of America
CitySan Francisco
Period11/12/2116/12/21
Internet address

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