Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

M. S. Fuhrer; M. T. Edmonds; D. Culcer; M. Nadeem; X. Wang; N. Medhekar; Y. Yin; J. H. Cole

doi:10.1109/IEDM19574.2021.9720587

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

M. S. Fuhrer, M. T. Edmonds, D. Culcer, M. Nadeem, X. Wang, N. Medhekar, Y. Yin, J. H. Cole

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research

5 Citations (Scopus)

Abstract

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ('on', with conducting edge states) to a conventional insulator ('off'), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na3Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting (IEDM 2021)
Place of Publication	Piscataway NJ United States
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	38.2.1-38.2.4
Number of pages	4
ISBN (Electronic)	9781665425728
ISBN (Print)	9781665425735
DOIs	https://doi.org/10.1109/IEDM19574.2021.9720587
Publication status	Published - 2021
Event	IEEE International Electron Devices Meeting (IEDM) 2021 - San Francisco, United States of America Duration: 11 Dec 2021 → 16 Dec 2021 https://ieeexplore.ieee.org/xpl/conhome/9720433/proceeding

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2021-December
ISSN (Print)	0163-1918

Conference

Conference	IEEE International Electron Devices Meeting (IEDM) 2021
Abbreviated title	IEDM 2021
Country/Territory	United States of America
City	San Francisco
Period	11/12/21 → 16/12/21
Internet address	https://ieeexplore.ieee.org/xpl/conhome/9720433/proceeding

Access to Document

10.1109/IEDM19574.2021.9720587

Cite this

Fuhrer, M. S., Edmonds, M. T., Culcer, D., Nadeem, M., Wang, X., Medhekar, N., Yin, Y., & Cole, J. H. (2021). Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor. In IEEE International Electron Devices Meeting (IEDM 2021) (pp. 38.2.1-38.2.4). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2021-December). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IEDM19574.2021.9720587

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title = "Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor",

abstract = "A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ('on', with conducting edge states) to a conventional insulator ('off'), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na3Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed. ",

author = "Fuhrer, {M. S.} and Edmonds, {M. T.} and D. Culcer and M. Nadeem and X. Wang and N. Medhekar and Y. Yin and Cole, {J. H.}",

note = "Funding Information: The authors acknowledge support from the ARC Centre of Excellence in Future Low-Energy Electronics Technologies. Publisher Copyright: {\textcopyright} 2021 IEEE.; IEEE International Electron Devices Meeting (IEDM) 2021, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",

year = "2021",

doi = "10.1109/IEDM19574.2021.9720587",

language = "English",

isbn = "9781665425735",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

pages = "38.2.1--38.2.4",

booktitle = "IEEE International Electron Devices Meeting (IEDM 2021)",

address = "United States of America",

url = "https://ieeexplore.ieee.org/xpl/conhome/9720433/proceeding",

}

Fuhrer, MS , Edmonds, MT, Culcer, D, Nadeem, M, Wang, X, Medhekar, N , Yin, Y & Cole, JH 2021, Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor. in IEEE International Electron Devices Meeting (IEDM 2021). Technical Digest - International Electron Devices Meeting, IEDM, vol. 2021-December, IEEE, Institute of Electrical and Electronics Engineers, Piscataway NJ United States, pp. 38.2.1-38.2.4, IEEE International Electron Devices Meeting (IEDM) 2021, San Francisco, California, United States of America, 11/12/21. https://doi.org/10.1109/IEDM19574.2021.9720587

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor. / Fuhrer, M. S.; Edmonds, M. T.; Culcer, D. et al.
IEEE International Electron Devices Meeting (IEDM 2021). Piscataway NJ United States: IEEE, Institute of Electrical and Electronics Engineers, 2021. p. 38.2.1-38.2.4 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2021-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research

TY - GEN

T1 - Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

AU - Fuhrer, M. S.

AU - Edmonds, M. T.

AU - Culcer, D.

AU - Nadeem, M.

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AU - Medhekar, N.

AU - Yin, Y.

AU - Cole, J. H.

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N2 - A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ('on', with conducting edge states) to a conventional insulator ('off'), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na3Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

AB - A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ('on', with conducting edge states) to a conventional insulator ('off'), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na3Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

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U2 - 10.1109/IEDM19574.2021.9720587

DO - 10.1109/IEDM19574.2021.9720587

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - IEEE International Electron Devices Meeting (IEDM 2021)

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - Piscataway NJ United States

T2 - IEEE International Electron Devices Meeting (IEDM) 2021

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Fuhrer MS , Edmonds MT, Culcer D, Nadeem M, Wang X, Medhekar N et al. Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor. In IEEE International Electron Devices Meeting (IEDM 2021). Piscataway NJ United States: IEEE, Institute of Electrical and Electronics Engineers. 2021. p. 38.2.1-38.2.4. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19574.2021.9720587

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

Abstract

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ARC Centre of Excellence in Future Low-energy Electronics Technologies

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Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

Abstract

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ARC Centre of Excellence in Future Low-energy Electronics Technologies

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