Properties and applications of high-mobility semiconducting nanotubes

T. Dürkop, B. M. Kim, M. S. Fuhrer

Research output: Contribution to journalReview ArticleResearchpeer-review

138 Citations (Scopus)

Abstract

Experiments to determine the resistivity and charge-carrier mobility in semiconducting carbon nanotubes are reviewed. Electron transport experiments on long chemical-vapour-deposition-grown semiconducting carbon nanotubes are interpreted in terms of diffusive transport in a field-effect transistor. This allows for extraction of the field-effect and saturation mobilities for hole carriers, as well as an estimate of the intrinsic hole mobility of the nanotubes. The intrinsic mobility can exceed 100000 cm2 V -1 s-1 at room temperature, which is greater than any other known semiconductor. Scanned-probe experiments show a low degree of disorder in chemical-vapour-deposition-grown semiconducting carbon nanotubes compared with laser-ablation produced nanotubes, and show conductivity and mean-free-path consistent with the high mobility values seen in transport experiments. The application of high-mobility semiconducting nanotubes to charge detection and memory is also reviewed; it is shown that single electronic charges may be detected with a semiconducting nanotube field-effect transistor at operating temperatures up to 200 K.

Original languageEnglish
JournalJournal of Physics: Condensed Matter
Volume16
Issue number18
DOIs
Publication statusPublished - 12 May 2004
Externally publishedYes

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