Progress in Epitaxial Thin-Film Na3Bi as a Topological Electronic Material

Iolanda Di Bernardo, Jack Hellerstedt, Chang Liu, Golrokh Akhgar, Weikang Wu, Shengyuan A. Yang, Dimitrie Culcer, Sung Kwan Mo, Shaffique Adam, Mark T. Edmonds, Michael S. Fuhrer

Research output: Contribution to journalReview ArticleResearchpeer-review

20 Citations (Scopus)

Abstract

Trisodium bismuthide (Na3Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum–energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na3Bi is presented, with a focus on technologically relevant large-area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field-driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress.

Original languageEnglish
Article number2005897
Number of pages22
JournalAdvanced Materials
Volume33
Issue number11
DOIs
Publication statusPublished - 18 Mar 2021

Keywords

  • magnetotransport
  • molecular beam epitaxy
  • NaBi
  • thin films
  • topological Dirac semimetals

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