Profound effect of substrate hydroxylation and hydration on electronic and optical properties of monolayer MoS2

Changxi Zheng; Zaiquan Xu; Qianhui Zhang; Mark Thomas Edmonds; Kenji Watanabe; Takashi Taniguchi; Qiaoliang Bao; Michael Fuhrer

doi:10.1021/acs.nanolett.5b00098

Profound effect of substrate hydroxylation and hydration on electronic and optical properties of monolayer MoS2

Changxi Zheng, Zaiquan Xu, Qianhui Zhang, Mark Thomas Edmonds, Kenji Watanabe, Takashi Taniguchi, Qiaoliang Bao, Michael Fuhrer

Research output: Contribution to journal › Article › Research › peer-review

50 Citations (Scopus)

Abstract

Atomic force microscopy, Kelvin probe force microscopy, and scanning photoluminescence spectroscopy image the progressive postgrowth hydroxylation and hydration of atomically flat Al2O3(0001) under monolayer MoS2, manifested in large work function shifts (100 mV) due to charge transfer (>1013 cm–2) from the substrate and changes in PL intensity, energy, and peak width. In contrast, trapped water between exfoliated graphene and Al2O3(0001) causes surface potential and doping changes one and two orders of magnitude smaller, respectively, and MoS2 grown on hydrophobic hexagonal boron nitride is unaffected by water exposure.

Original language	English
Pages (from-to)	3096-3102
Number of pages	7
Journal	Nano Letters
Volume	15
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.5b00098
Publication status	Published - 2015

Keywords

Molybdenum disulfide
transition metal dichalcogenides
substrate
doping
photoluminescence
boron nitride

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10.1021/acs.nanolett.5b00098

Cite this

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title = "Profound effect of substrate hydroxylation and hydration on electronic and optical properties of monolayer MoS2",

abstract = "Atomic force microscopy, Kelvin probe force microscopy, and scanning photoluminescence spectroscopy image the progressive postgrowth hydroxylation and hydration of atomically flat Al2O3(0001) under monolayer MoS2, manifested in large work function shifts (100 mV) due to charge transfer (>1013 cm–2) from the substrate and changes in PL intensity, energy, and peak width. In contrast, trapped water between exfoliated graphene and Al2O3(0001) causes surface potential and doping changes one and two orders of magnitude smaller, respectively, and MoS2 grown on hydrophobic hexagonal boron nitride is unaffected by water exposure.",

keywords = "Molybdenum disulfide, transition metal dichalcogenides, substrate, doping, photoluminescence, boron nitride",

author = "Changxi Zheng and Zaiquan Xu and Qianhui Zhang and Edmonds, {Mark Thomas} and Kenji Watanabe and Takashi Taniguchi and Qiaoliang Bao and Michael Fuhrer",

year = "2015",

doi = "10.1021/acs.nanolett.5b00098",

language = "English",

volume = "15",

pages = "3096--3102",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Profound effect of substrate hydroxylation and hydration on electronic and optical properties of monolayer MoS2

AU - Zheng, Changxi

AU - Xu, Zaiquan

AU - Zhang, Qianhui

AU - Edmonds, Mark Thomas

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Bao, Qiaoliang

AU - Fuhrer, Michael

PY - 2015

Y1 - 2015

N2 - Atomic force microscopy, Kelvin probe force microscopy, and scanning photoluminescence spectroscopy image the progressive postgrowth hydroxylation and hydration of atomically flat Al2O3(0001) under monolayer MoS2, manifested in large work function shifts (100 mV) due to charge transfer (>1013 cm–2) from the substrate and changes in PL intensity, energy, and peak width. In contrast, trapped water between exfoliated graphene and Al2O3(0001) causes surface potential and doping changes one and two orders of magnitude smaller, respectively, and MoS2 grown on hydrophobic hexagonal boron nitride is unaffected by water exposure.

AB - Atomic force microscopy, Kelvin probe force microscopy, and scanning photoluminescence spectroscopy image the progressive postgrowth hydroxylation and hydration of atomically flat Al2O3(0001) under monolayer MoS2, manifested in large work function shifts (100 mV) due to charge transfer (>1013 cm–2) from the substrate and changes in PL intensity, energy, and peak width. In contrast, trapped water between exfoliated graphene and Al2O3(0001) causes surface potential and doping changes one and two orders of magnitude smaller, respectively, and MoS2 grown on hydrophobic hexagonal boron nitride is unaffected by water exposure.

KW - Molybdenum disulfide

KW - transition metal dichalcogenides

KW - substrate

KW - doping

KW - photoluminescence

KW - boron nitride

UR - http://pubs.acs.org.ezproxy.lib.monash.edu.au/doi/pdf/10.1021/acs.nanolett.5b00098

U2 - 10.1021/acs.nanolett.5b00098

DO - 10.1021/acs.nanolett.5b00098

M3 - Article

SN - 1530-6984

VL - 15

SP - 3096

EP - 3102

JO - Nano Letters

JF - Nano Letters

IS - 5

ER -

Profound effect of substrate hydroxylation and hydration on electronic and optical properties of monolayer MoS2

Abstract

Keywords

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Semiconductor quantum wells at the atomic scale

Understanding and Controlling the Properties of Dirac Electronic Materials

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Profound effect of substrate hydroxylation and hydration on electronic and optical properties of monolayer MoS2

Abstract

Keywords

Access to Document

Other files and links

Projects

Semiconductor quantum wells at the atomic scale

Understanding and Controlling the Properties of Dirac Electronic Materials

Cite this