Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe2

Lei Zhang; Tong Yang; Muhammad Fauzi Sahdan; null Arramel; Wenshuo Xu; Kaijian Xing; Yuan Ping Feng; Wenjing Zhang; Zhuo Wang; Andrew T.S. Wee

doi:10.1002/aelm.202100559

Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe₂

Lei Zhang, Tong Yang, Muhammad Fauzi Sahdan, Arramel, Wenshuo Xu, Kaijian Xing, Yuan Ping Feng, Wenjing Zhang, Zhuo Wang, Andrew T.S. Wee

School of Physics and Astronomy

Research output: Contribution to journal › Article › Research › peer-review

6 Citations (Scopus)

Abstract

2D platinum diselenide (PtSe₂) has received significant attention for 2D transistor applications due to its high carrier mobility. Here, using molecular beam epitaxy, the growth of 2D PtSe₂ is investigated on highly oriented pyrolytic graphite (HOPG) and their electronic properties are unveiled via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectroscopy as well as density functional theory (DFT) calculations. PtSe₂ adopts a layer-by-layer growth mode on HOPG and shows a decreasing bandgap with increasing layer number. For the layer numbers from one to four, PtSe₂ has bandgaps of 2.0 ± 0.1, 1.1 ± 0.1, 0.6 ± 0.1, and 0.20 ± 0.1 eV, respectively, and becomes semimetal from the fifth layer. DFT calculations reproduce the layer-dependent evolution of both the bandgap and band edges, suggest an indirect bandgap structure, and elucidate the underlying physics at the atomic level.

Original language	English
Article number	2100559
Number of pages	7
Journal	Advanced Electronic Materials
Volume	7
Issue number	11
DOIs	https://doi.org/10.1002/aelm.202100559
Publication status	Published - Nov 2021

Keywords

2D materials
density functional theory calculations
molecular beam epitaxy
platinum diselenide
scanning tunneling microscopy/spectroscopy

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10.1002/aelm.202100559

Cite this

@article{03264d1599894c63bc9c0eeccda9de64,

title = "Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe2",

abstract = "2D platinum diselenide (PtSe2) has received significant attention for 2D transistor applications due to its high carrier mobility. Here, using molecular beam epitaxy, the growth of 2D PtSe2 is investigated on highly oriented pyrolytic graphite (HOPG) and their electronic properties are unveiled via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectroscopy as well as density functional theory (DFT) calculations. PtSe2 adopts a layer-by-layer growth mode on HOPG and shows a decreasing bandgap with increasing layer number. For the layer numbers from one to four, PtSe2 has bandgaps of 2.0 ± 0.1, 1.1 ± 0.1, 0.6 ± 0.1, and 0.20 ± 0.1 eV, respectively, and becomes semimetal from the fifth layer. DFT calculations reproduce the layer-dependent evolution of both the bandgap and band edges, suggest an indirect bandgap structure, and elucidate the underlying physics at the atomic level.",

keywords = "2D materials, density functional theory calculations, molecular beam epitaxy, platinum diselenide, scanning tunneling microscopy/spectroscopy",

author = "Lei Zhang and Tong Yang and Sahdan, {Muhammad Fauzi} and Arramel and Wenshuo Xu and Kaijian Xing and Feng, {Yuan Ping} and Wenjing Zhang and Zhuo Wang and Wee, {Andrew T.S.}",

note = "Funding Information: L.Z. acknowledges Hongxia for her support and love. Z.W. acknowledges financial support from National Natural Science Foundation of China (61805159), the Guangdong Natural Science Funds (2019A1515011007), Shenzhen Peacock Plan (827‐000473), and Natural Science Foundation of SZU (2019015). A. acknowledges a research grant from Ministry of Education, Singapore MOE2018‐T2‐1‐088 and Singapore National Research Foundation Fellowship NRF‐NSFC grant number R‐144‐000‐405‐281. Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",

year = "2021",

month = nov,

doi = "10.1002/aelm.202100559",

language = "English",

volume = "7",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag GmbH & Co. KGaA",

number = "11",

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T1 - Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe2

AU - Zhang, Lei

AU - Yang, Tong

AU - Sahdan, Muhammad Fauzi

AU - Arramel, null

AU - Xu, Wenshuo

AU - Xing, Kaijian

AU - Feng, Yuan Ping

AU - Zhang, Wenjing

AU - Wang, Zhuo

AU - Wee, Andrew T.S.

N1 - Funding Information: L.Z. acknowledges Hongxia for her support and love. Z.W. acknowledges financial support from National Natural Science Foundation of China (61805159), the Guangdong Natural Science Funds (2019A1515011007), Shenzhen Peacock Plan (827‐000473), and Natural Science Foundation of SZU (2019015). A. acknowledges a research grant from Ministry of Education, Singapore MOE2018‐T2‐1‐088 and Singapore National Research Foundation Fellowship NRF‐NSFC grant number R‐144‐000‐405‐281. Publisher Copyright: © 2021 Wiley-VCH GmbH Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/11

Y1 - 2021/11

N2 - 2D platinum diselenide (PtSe2) has received significant attention for 2D transistor applications due to its high carrier mobility. Here, using molecular beam epitaxy, the growth of 2D PtSe2 is investigated on highly oriented pyrolytic graphite (HOPG) and their electronic properties are unveiled via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectroscopy as well as density functional theory (DFT) calculations. PtSe2 adopts a layer-by-layer growth mode on HOPG and shows a decreasing bandgap with increasing layer number. For the layer numbers from one to four, PtSe2 has bandgaps of 2.0 ± 0.1, 1.1 ± 0.1, 0.6 ± 0.1, and 0.20 ± 0.1 eV, respectively, and becomes semimetal from the fifth layer. DFT calculations reproduce the layer-dependent evolution of both the bandgap and band edges, suggest an indirect bandgap structure, and elucidate the underlying physics at the atomic level.

AB - 2D platinum diselenide (PtSe2) has received significant attention for 2D transistor applications due to its high carrier mobility. Here, using molecular beam epitaxy, the growth of 2D PtSe2 is investigated on highly oriented pyrolytic graphite (HOPG) and their electronic properties are unveiled via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectroscopy as well as density functional theory (DFT) calculations. PtSe2 adopts a layer-by-layer growth mode on HOPG and shows a decreasing bandgap with increasing layer number. For the layer numbers from one to four, PtSe2 has bandgaps of 2.0 ± 0.1, 1.1 ± 0.1, 0.6 ± 0.1, and 0.20 ± 0.1 eV, respectively, and becomes semimetal from the fifth layer. DFT calculations reproduce the layer-dependent evolution of both the bandgap and band edges, suggest an indirect bandgap structure, and elucidate the underlying physics at the atomic level.

KW - 2D materials

KW - density functional theory calculations

KW - molecular beam epitaxy

KW - platinum diselenide

KW - scanning tunneling microscopy/spectroscopy

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JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

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ER -

Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe₂

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Keywords

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ARC Centre of Excellence in Future Low-energy Electronics Technologies

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Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe2

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Keywords

Access to Document

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ARC Centre of Excellence in Future Low-energy Electronics Technologies

Cite this

Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe₂