Plasmonics for III-V semiconductor solar cells

S. Mokkapati; H. F. Lu; S. Turner; L. Fu; H. H. Tan; C. Jagadish

doi:10.1109/IPCon.2012.6358486

Plasmonics for III-V semiconductor solar cells

S. Mokkapati, H. F. Lu, S. Turner, L. Fu, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots^1,2 or nanowires are under investigation to demonstrate high efficiency solar cells.

Original language	English
Title of host publication	2012 IEEE Photonics Conference, IPC 2012
Pages	56-57
Number of pages	2
DOIs	https://doi.org/10.1109/IPCon.2012.6358486
Publication status	Published - 1 Dec 2012
Externally published	Yes
Event	IEEE Photonics Conference 2012 - Hyatt Regency San Francisco Airport, Burlingame, United States of America Duration: 23 Sept 2012 → 27 Sept 2012 Conference number: 25th https://ieeexplore.ieee.org/xpl/conhome/6337031/proceeding (Proceedings)

Publication series

Name	2012 IEEE Photonics Conference, IPC 2012

Conference

Conference	IEEE Photonics Conference 2012
Abbreviated title	IPC 2012
Country/Territory	United States of America
City	Burlingame
Period	23/09/12 → 27/09/12
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6337031/proceeding (Proceedings)

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10.1109/IPCon.2012.6358486

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title = "Plasmonics for III-V semiconductor solar cells",

abstract = "III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2 or nanowires are under investigation to demonstrate high efficiency solar cells.",

author = "S. Mokkapati and Lu, \{H. F.\} and S. Turner and L. Fu and Tan, \{H. H.\} and C. Jagadish",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/IPCon.2012.6358486",

language = "English",

isbn = "9781457707315",

series = "2012 IEEE Photonics Conference, IPC 2012",

pages = "56--57",

booktitle = "2012 IEEE Photonics Conference, IPC 2012",

note = "IEEE Photonics Conference 2012, IPC 2012 ; Conference date: 23-09-2012 Through 27-09-2012",

url = "https://ieeexplore.ieee.org/xpl/conhome/6337031/proceeding",

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TY - GEN

T1 - Plasmonics for III-V semiconductor solar cells

AU - Mokkapati, S.

AU - Lu, H. F.

AU - Turner, S.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

N1 - Conference code: 25th

PY - 2012/12/1

Y1 - 2012/12/1

N2 - III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2 or nanowires are under investigation to demonstrate high efficiency solar cells.

AB - III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2 or nanowires are under investigation to demonstrate high efficiency solar cells.

UR - https://www.scopus.com/pages/publications/84871734588

U2 - 10.1109/IPCon.2012.6358486

DO - 10.1109/IPCon.2012.6358486

M3 - Conference Paper

AN - SCOPUS:84871734588

SN - 9781457707315

T3 - 2012 IEEE Photonics Conference, IPC 2012

SP - 56

EP - 57

BT - 2012 IEEE Photonics Conference, IPC 2012

T2 - IEEE Photonics Conference 2012

Y2 - 23 September 2012 through 27 September 2012

ER -

Plasmonics for III-V semiconductor solar cells

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