Plasmonics for III-V semiconductor solar cells

S. Mokkapati, H. F. Lu, S. Turner, L. Fu, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

Abstract

III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2 or nanowires are under investigation to demonstrate high efficiency solar cells.

Original languageEnglish
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Pages56-57
Number of pages2
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
EventIEEE Photonics Conference 2012 - Hyatt Regency San Francisco Airport, Burlingame, United States of America
Duration: 23 Sep 201227 Sep 2012
Conference number: 25th
https://ieeexplore.ieee.org/xpl/conhome/6337031/proceeding (Proceedings)

Publication series

Name2012 IEEE Photonics Conference, IPC 2012

Conference

ConferenceIEEE Photonics Conference 2012
Abbreviated titleIPC 2012
CountryUnited States of America
CityBurlingame
Period23/09/1227/09/12
Internet address

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