Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

L. Fu; H. F. Lu; S. Mokkapati; G. Jolley; H. H. Tan; C. Jagadish

doi:10.1109/PHO.2011.6110590

Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

L. Fu, H. F. Lu, S. Mokkapati, G. Jolley, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.

Original language	English
Title of host publication	2011 IEEE Photonics Conference
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	387-388
Number of pages	2
ISBN (Print)	9781424489404
DOIs	https://doi.org/10.1109/PHO.2011.6110590
Publication status	Published - 1 Dec 2011
Externally published	Yes
Event	IEEE Photonics Conference 2011 - Marriott Crystal Gateway, Arlington, United States of America Duration: 9 Oct 2011 → 13 Oct 2011 Conference number: 24th https://ieeexplore.ieee.org/xpl/conhome/6095472/proceeding (Proceedings)

Conference

Conference	IEEE Photonics Conference 2011
Abbreviated title	IPC 2011
Country/Territory	United States of America
City	Arlington
Period	9/10/11 → 13/10/11
Other	24th Annual Meeting on IEEE Photonic Society, PHO 2011
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6095472/proceeding (Proceedings)

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10.1109/PHO.2011.6110590

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title = "Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells",

abstract = "We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.",

author = "L. Fu and Lu, {H. F.} and S. Mokkapati and G. Jolley and Tan, {H. H.} and C. Jagadish",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/PHO.2011.6110590",

language = "English",

isbn = "9781424489404",

pages = "387--388",

booktitle = "2011 IEEE Photonics Conference",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

note = "IEEE Photonics Conference 2011, IPC 2011 ; Conference date: 09-10-2011 Through 13-10-2011",

url = "https://ieeexplore.ieee.org/xpl/conhome/6095472/proceeding",

}

Fu, L, Lu, HF, Mokkapati, S, Jolley, G, Tan, HH & Jagadish, C 2011, Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells. in 2011 IEEE Photonics Conference. IEEE, Institute of Electrical and Electronics Engineers, pp. 387-388, IEEE Photonics Conference 2011, Arlington, Virginia, United States of America, 9/10/11. https://doi.org/10.1109/PHO.2011.6110590

TY - GEN

T1 - Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

AU - Fu, L.

AU - Lu, H. F.

AU - Mokkapati, S.

AU - Jolley, G.

AU - Tan, H. H.

AU - Jagadish, C.

N1 - Conference code: 24th

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.

AB - We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=84855995267&partnerID=8YFLogxK

U2 - 10.1109/PHO.2011.6110590

DO - 10.1109/PHO.2011.6110590

M3 - Conference Paper

AN - SCOPUS:84855995267

SN - 9781424489404

SP - 387

EP - 388

BT - 2011 IEEE Photonics Conference

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - IEEE Photonics Conference 2011

Y2 - 9 October 2011 through 13 October 2011

ER -

Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

Abstract

Conference

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